HT48E10 Holtek Semiconductor, HT48E10 Datasheet - Page 18

• Manufacturer Part Number: HT48E10
• Description: I/O Type 8-Bit MTP MCU
• Manufacturer: Holtek Semiconductor

EECR A.C. Characteristics
READ
The READ instruction will stream out data at a specified
address on the DO. The data on DO changes during the
low-to-high edge of SK. The 8 bits data stream is pre-
ceded by a logical 0 dummy bit. Irrespective of the
condition of the EWEN or EWDS instruction, the READ
command is always valid and independent of these two
instructions. After the data word has been read the in-
ternal address will be automatically incremented by 1 al-
lowing the next consecutive data word to be read out
without entering further address data. The address will
wrap around with CS High until CS returns to Low.
EWEN/EWDS
The EWEN/EWDS instruction will enable or disable the
programming capabilities. At both the power-on and
power off state the device automatically enters the disable
mode. Before a WRITE, ERASE, WRAL or ERAL instruc-
tion is given, the programming enable instruction EWEN
must be issued, otherwise the ERASE/WRITE instruction
is invalid. After the EWEN instruction is issued, the pro-
gramming enable condition remains until power is turned
off or an EWDS instruction is given. No data can be written
into the EEPROM data memory in the programming dis-
abled state. By so doing, the internal memory data can be
protected.
Rev. 1.50
Symbol
f
t
t
t
t
t
t
t
t
t
t
t
t
t
SK
SKH
SKL
CSS
CSH
CDS
DIS
DIH
PD1
PD0
SV
HZ
PR1
PR2
Clock Frequency
SK High Time
SK Low Time
CS Setup Time
CS Hold Time
CS Deselect Time
DI Setup Time
DI Hold Time
DO Delay to 1
DO Delay to 0
Status Valid Time
DO Disable Time
Write Cycle Time Per Word 1
Write Cycle Time Per Word 2
Parameter
Min.
250
250
250
100
100
100
50
0
0
V
CC
18
=5V 10%
ERASE
The ERASE instruction erases data at the specified ad-
dresses in the programming enable mode. After the
ERASE op-code and the specified address have been
issued, the data erase is activated by the falling edge of
CS. Since the internal auto-timing generator provides all
timing signals for the internal erase, so the SK clock is
not required. During the internal erase, the busy/ready
status can be verified if CS is high. The DO will remain
low but when the operation is over, the DO will return to
high and further instructions can be executed.
WRITE
The WRITE instruction writes data into the EEPROM
data memory at the specified addresses in the program-
ming enable mode. After the WRITE op-code and the
specified address and data have been issued, the data
writing is activated by the falling edge of CS. Since the
internal auto-timing generator provides all timing signals
for the internal writing, so the SK clock is not required.
The auto-timing write cycle includes an automatic
erase-before-write capability. So, it is not necessary to
erase data before the WRITE instruction. During the in-
ternal writing, we can verify the busy/ready status if CS
is high. The DO will remain low but when the operation is
over, the DO will return to high and further instructions
can be executed.
Max.
250
250
250
10
2
2
Min.
500
500
100
250
200
200
200
V
0
0
CC
=2.2V 10%
Max.
500
500
250
10
1
5
October 31, 2006
www.DataSheet4U.com
HT48E10
MHz
Unit
Ta=25 C
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns