SGS5N60RUFD Fairchild Semiconductor, SGS5N60RUFD Datasheet
SGS5N60RUFD
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SGS5N60RUFD Summary of contents
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... 100 C C Parameter April 2001 IGBT = 100 15V 2 CE(sat 37ns (typ SGS5N60RUFD Units 600 -55 to +150 C -55 to +150 C 300 C Typ. Max. Units -- 3.5 C/W -- 5.0 C/W -- 62.5 C/W SGS5N60RUFD Rev. A ...
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... V -- 2 354 -- 136 200 107 -- J -- 195 280 250 350 ns -- 103 -- J -- 220 -- J -- 323 -- 7 Typ. Max. Units -- 1 3 138 nC -- 124 -- SGS5N60RUFD Rev. A ...
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... 125℃ ------ Collector - Emitter Voltage, V [V] CE Characteristics V = 300V CC Load Current : peak of square wave = 100℃ 100 Frequency [KHz] Common Emitter T = 125℃ C 10A Gate - Emitter Voltage SGS5N60RUFD Rev. A 1000 20 ...
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... Eoff Eon Eoff Common Emitter = ± 15V V = 300V 25℃ ━━ 125℃ ------ C 10 100 Gate Resistance ± 15V 25℃ ━━ = 125℃ ------ Toff Collector Current, I [A] C SGS5N60RUFD Rev ...
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... Fig 17. Transient Thermal Impedance of IGBT = 60 = 25℃ 300V 200V V = 100V Gate Charge, Q [nC] g Safe Operating Area V = 20V 100℃ 100 1000 Collector-Emitter Voltage, V [V] CE Pdm t1 t2 Duty factor Peak Tj = Pdm Zthjc + SGS5N60RUFD Rev ...
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... V = 200V 25℃ ━━ 100℃ ------ 100 [V] F Fig 19. Reverse Recovery Current 100 V = 200V 25℃ ━━ 100℃ ------ 1000 100 Fig 21. Reverse Recovery Time 1000 di/dt [A/us] 1000 di/dt [A/us] SGS5N60RUFD Rev. A ...
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... Package Dimension TO-220F (FS PKG CODE AQ) 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2001 Fairchild Semiconductor Corporation ø3.18 0.20 0.10 (1.00x45 ) 0.50 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters SGS5N60RUFD Rev. A ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ HiSeC™ ...