IRFI510 Fairchild Semiconductor, IRFI510 Datasheet - Page 2

• Manufacturer Part Number: IRFI510
• Description: Advanced Power MOSFET
• Manufacturer: Fairchild Semiconductor

O
O
O
O
O
IRFW/I510A
4
2
5
3
1
Symbol
Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
Symbol
Notes ;
BV/ T
R
BV
V
t
t
V
I
I
C
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=3mH, I
I
Pulse Test : Pulse Width = 250 s, Duty Cycle
Essentially Independent of Operating Temperature
C
C
GS(th)
Q
Q
I
Q
DS(on)
d(on)
d(off)
SD
GSS
DSS
g
Q
I
SM
t
t
SD
t
S
rr
oss
rss
DSS
iss
fs
r
f
gs
gd
rr
g
< _
5.6A, di/dt
J
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
=5.6A, V
< _
250A/ s, V
DD
Characteristic
Characteristic
=25V, R
DD
G
=27 , Starting T
< _
BV
DSS
(T
, Starting T
C
=25
O
O
< _
4
1
2%
J
C
=25
J
unless otherwise specified)
Min.
Min.
=25
100
2.0
--
--
--
--
--
o
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
C
o
C
Typ.
Typ.
0.11
3.49
0.23
190
8.5
1.6
4.1
55
21
10
14
28
18
85
--
--
--
--
--
--
--
--
--
--
Max. Units
Max. Units
-100
100
100
240
4.0
0.4
5.6
1.5
10
20
65
25
30
40
70
50
12
--
--
--
--
--
--
--
V/
nA
nC
pF
ns
ns
V
V
A
V
A
C
C
V
I
V
V
V
V
V
V
V
V
V
R
V
I
See Fig 6 & Fig 12
Integral reverse pn-diode
in the MOSFET
T
T
di
D
D
J
J
GS
DS
GS
GS
DS
DS
GS
DS
GS
DD
DS
=250 A
G
=5.6A
F
=25 ,I
=25 ,I
=24
/dt=100A/ s
=0V,I
=5V,I
=20V
=-20V
=100V
=80V,T
=10V,I
=40V,I
=0V,V
=50V,I
=80V,V
See Fig 13
Test Condition
Test Condition
C
POWER MOSFET
C
See Fig 5
N-CHANNEL
D
D
S
F
DS
=250 A
=250 A
D
D
D
=5.6A
=5.6A,V
C
GS
=2.8A
=2.8A
=5.6A,
=25V,f =1MHz
=150
=10V,
See Fig 7
C
GS
=0V
O
O
4
4
O
O
O
O
O
4
4
5
5
4