SGW5N60RUFD Fairchild Semiconductor, SGW5N60RUFD Datasheet
SGW5N60RUFD
Related parts for SGW5N60RUFD
SGW5N60RUFD Summary of contents
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... T = 100 100 C C Parameter (2) IGBT = 100 15V 2 CE(sat 37ns (typ SGW5N60RUFD Units 600 -55 to +150 C -55 to +150 C 300 C Typ. Max. Units -- 2.0 C/W -- 3.5 C C/W SGW5N60RUFD Rev. A1 ...
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... V -- 2 354 -- 136 200 107 -- uJ -- 195 280 250 350 ns -- 103 -- uJ -- 220 -- uJ -- 323 -- 7 Typ. Max. Units -- 1 3 138 nC -- 124 -- SGW5N60RUFD Rev. A1 ...
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... 125℃ ------ Collector - Emitter Voltage 300V CC Load Current : peak of square wave = 100℃ 100 Frequency [KHz] Common Emitter T = 125℃ C 10A Gate - Emitter Voltage SGW5N60RUFD Rev. A1 1000 20 ...
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... Eoff Eon Eoff Common Emitter = ± 15V V = 300V 25℃ ━━ 125℃ ------ C 10 100 Gate Resistance ± 15V 25℃ ━━ = 125℃ ------ Toff Collector Current, I [A] C SGW5N60RUFD Rev ...
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... Fig 17. Transient Thermal Impedance of IGBT = 60 = 25℃ 300V 200V V = 100V Gate Charge, Q [nC] g Safe Operating Area V = 20V 100℃ 100 1000 Collector-Emitter Voltage, V [V] CE Pdm t1 t2 Duty factor Peak Tj = Pdm Zthjc + SGW5N60RUFD Rev ...
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... V = 200V 25℃ ━━ 100℃ ------ 100 [V] F Fig 19. Reverse Recovery Current 100 V = 200V 25℃ ━━ 100℃ ------ 1000 100 Fig 21. Reverse Recovery Time 1000 di/dt [A/us] 1000 di/dt [A/us] SGW5N60RUFD Rev. A1 ...
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... Package Dimension 9.90 0.20 1.27 0.10 2.54 TYP 10.00 ©2002 Fairchild Semiconductor Corporation 2 D -PAK 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 0.10 0.15 2.40 0.20 +0.10 0.50 –0.05 10.00 0.20 (8.00) (4.40) (2XR0.45) 0.80 0.10 Dimensions in Millimeters SGW5N60RUFD Rev. A1 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ ...