SGW10N60RUFD Fairchild Semiconductor, SGW10N60RUFD Datasheet
SGW10N60RUFD
Related parts for SGW10N60RUFD
SGW10N60RUFD Summary of contents
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... 100 C C Parameter (2) IGBT = 100 15V 2 10A CE(sat 42ns (typ SGW10N60RUFD Units 600 -55 to +150 C -55 to +150 C 300 C Typ. Max. Units -- 1.6 C/W -- 2.5 C C/W SGW10N60RUFD Rev. A1 ...
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... V -- 2 660 -- pF -- 115 -- 158 200 ns -- 141 -- uJ -- 215 -- uJ -- 356 500 242 350 ns -- 161 -- uJ -- 452 -- uJ -- 613 860 7 Typ. Max. Units -- 1 3 180 nC -- 220 -- SGW10N60RUFD Rev. A1 ...
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... [V] GE Fig 6. Saturation Voltage vs Collector - Emitter Voltage 300V CC Load Current : peak of square wave 1 10 100 1000 Frequency [KHz] 20A 10A Gate - Emitter Voltage SGW10N60RUFD Rev. A1 ...
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... Collector Current = ± 15V = 300V Ton Tr 10 100 Gate Resistance ± 15V = 300V Eoff Eon Eoff 10 100 Gate Resistance ± 15V 25℃ ━━ = 125℃ ------ Collector Current, I [A] C SGW10N60RUFD Rev ...
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... Fig 17. Transient Thermal Impedance of IGBT = 30 = 25℃ 300 100 V CC 200 Gate Charge Safe Operating Area V = 20V 100℃ 100 1000 Collector-Emitter Voltage, V [V] CE Pdm t1 t2 Duty factor Peak Tj = Pdm Zthjc + SGW10N60RUFD Rev. A1 ...
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... V = 200V 12A F = 25℃ ━━ 100℃ ------ 100 3 [V] FM Fig 19. Reverse Recovery Current 100 1000 100 Fig 21. Reverse Recovery Time 1000 di/dt [A/us] V =200V R I =12A F = 25℃ ━━ 100℃ ------ C 1000 di/dt [A/us] SGW10N60RUFD Rev. A1 ...
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... Package Dimension 9.90 0.20 1.27 0.10 2.54 TYP 10.00 ©2002 Fairchild Semiconductor Corporation 2 D -PAK 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 0.10 0.15 2.40 0.20 +0.10 0.50 –0.05 10.00 0.20 (8.00) (4.40) (2XR0.45) 0.80 0.10 Dimensions in Millimeters SGW10N60RUFD Rev. A1 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ ...