KSP75 Fairchild Semiconductor, KSP75 Datasheet

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KSP75

Manufacturer Part Number
KSP75
Description
PNP Epitaxial Silicon Darlington Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
©2001 Fairchild Semiconductor Corporation
Darlington Transistor
• Collector-Emitter Voltage: V
• Collector Power Dissipation: P
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
Electrical Characteristics
V
V
I
P
T
T
BV
BV
I
I
I
h
V
V
C
CBO
EBO
CES
Symbol
FE
J
STG
CES
EBO
C
CE
BE
CEO
CBO
Symbol
(on)
(sat)
Collector-Base Breakdown Voltage
Collector-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
CES
Parameter
C
= KSP75: 40V
(max)=625mW
KSP76: 50V
KSP77: 60V
: KSP75
: KSP76
: KSP77
: KSP75
: KSP76
: KSP77
: KSP75
: KSP76
: KSP75
: KSP76
: KSP77
: KSP77
T
a
=25 C unless otherwise noted
T
Parameter
: KSP75
: KSP76
: KSP77
a
KSP75/76/77
=25 C unless otherwise noted
I
I
V
V
V
V
V
V
V
V
V
I
V
C
C
C
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
= -100 A, I
= -100 A, I
= -100mA, I
= -30V, I
= -40V, I
= -50V, I
= -10V, I
= -30V, I
= -40V, I
= -50V, I
= -5V, I
= -5V, I
= -5V, I
Test Condition
C
C
C
E
E
E
B
E
E
E
= -10mA
= -100mA
= -100mA
B
E
=0
=0
=0
=0
=0
=0
=0
B
=0
=0
= -0.1mA
1. Emitter 2. Base 3. Collector
1
-55~150
Value
-500
625
150
-40
-50
-60
-10
Min.
10K
10K
-40
-50
-60
-40
-50
-60
TO-92
Max.
-100
-100
-100
-100
-500
-500
-500
-1.5
2
Units
mW
mA
Rev. A1, July 2001
V
V
V
V
C
C
Units
nA
nA
nA
nA
nA
nA
nA
nA
V
V
V
V
V
V
V
V

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KSP75 Summary of contents

Page 1

... Darlington Transistor • Collector-Emitter Voltage KSP75: 40V CES • Collector Power Dissipation: P (max)=625mW C PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings Symbol V Collector-Base Voltage CES V Emitter-Base Voltage EBO I Collector Current C P Collector Power Dissipation C T Junction Temperature J T Storage Temperature ...

Page 2

... Typical Characteristics 1000k 100k 10k 1k -1 -10 I [mA], COLLECTOR CURRENT C Figure 1. DC current Gain 200 100 10 1 -0.0 -0.4 -0.8 -1.2 V [V], BASE-EMITTER VOLTAGE BE Figure 3. Base-Emitter On Voltage ©2001 Fairchild Semiconductor Corporation - - -0.1 -100 -1000 -1 Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -10k V = -5V CE -1k -100 -10 -1 -1.6 -2.0 -2.4 Figure 4 ...

Page 3

... Package Demensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2001 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A1, July 2001 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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