MT58L128L18D Micron Semiconductor Products, Inc., MT58L128L18D Datasheet - Page 14

• Manufacturer Part Number: MT58L128L18D
• Description: 2Mb Syncburst SRAM, 3.3V Vdd, 3.3V I/O, Pipelined, Dcd,
• Manufacturer: Micron Semiconductor Products, Inc.

NOT RECOMENDED FOR NEW DESIGNS
SNOOZE MODE
mode in which the device is deselected and current is
reduced to I
dictated by the length of time the ZZ pin is in a HIGH
state. After the device enters SNOOZE MODE, all inputs
except ZZ become gated inputs and are ignored.
NOTE: 1. This parameter is sampled.
2Mb: 128K x 18, 64K x 32/36 Pipelined, DCD SyncBurst SRAM
MT58L128L18D_C.p65 – Rev. C, Pub. 11/02
SNOOZE MODE ELECTRICAL CHARACTERISTICS
Outputs (Q)
ALL INPUTS
(except ZZ)
DESCRIPTION
Current during SNOOZE MODE
ZZ active to input ignored
ZZ inactive to input sampled
ZZ active to snooze current
ZZ inactive to exit snooze current
I
SNOOZE MODE is a low-current, “power-down”
SUPPLY
CLK
ZZ
SB
2
Z
. The duration of SNOOZE MODE is
t ZZI
t ZZ
I ISB2Z
SNOOZE MODE WAVEFORM
CONDITIONS
ZZ ≥ V
IH
14
PIPELINED, DCD SYNCBURST SRAM
High-Z
that causes the device to enter SNOOZE MODE. When
the ZZ pin becomes a logic HIGH, I
after the setup time
operation pending when the device enters SNOOZE
MODE is not guaranteed to complete successfully.
Therefore, SNOOZE MODE must not be initiated until
valid pending operations are completed.
The ZZ pin is an asynchronous, active HIGH input
SYMBOL
2Mb: 128K x 18, 64K x 32/36
t
I
t
t
RZZI
SB
t
RZZ
Micron Technology, Inc., reserves the right to change products or specifications without notice.
ZZI
ZZ
2
Z
2(
MIN
t
0
KC)
t
ZZ is met. Any READ or WRITE
DESELECT or READ Only
t RZZI
2(
2(
MAX
10
t
t
KC)
KC)
t RZZ
SB
UNITS
2
mA
ns
ns
ns
ns
Z
©2002, Micron Technology, Inc.
is guaranteed
DON’T CARE
NOTES
1
1
1
1