MT28F002B3 Micron Semiconductor Products, Inc., MT28F002B3 Datasheet - Page 28

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MT28F002B3

Manufacturer Part Number
MT28F002B3
Description
2Mb Smart 3 Boot Block Flash Memory
Manufacturer
Micron Semiconductor Products, Inc.
Datasheet
TIMING PARAMETERS
Commercial Temperature (0 C
Extended Temperature (-40 C
NOTE: 1. Address inputs are “Don’t Care” but must be held stable.
2Mb Smart 3 Boot Block Flash Memory
F48.p65 – Rev. 1/00
SYMBOL
t
t
t
t
t
t
t
t
t
t
A0-A16/(A17)
WC
CPH
CP
AS
AH
DS
DH
WS
WH
VPS1
DQ0-DQ15
DQ0-DQ7/
WP#
RP#
WE#
2. If BYTE# is LOW, data and command are 8-bit. If BYTE# is HIGH, data is 16-bit and command is 8-bit (MT28F200B3
3. Either RP# at V
OE#
CE#
V
PP
2
3
3
only).
V
V
V
PPH2
PPH1
V
PPLK
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
HH
IH
IH
IH
IH
IH
IH
IH
IL
IL
IL
IL
IL
IL
IL
IL
ERASE SETUP input
t WS
t RS
WRITE SETUP or
t CP
HH
t DS
t AS
or WP# HIGH unlocks the boot block.
MIN
200
90
20
70
70
10
70
0
0
0
Note 1
-9
CMD
in
MAX
T
T
A
A
t AH
CE#-CONTROLLED WRITE/ERASE
t WH
t CPH
+85 C)
t WC
+70 C)
t DH
MIN
100
200
30
70
80
10
70
0
0
0
t DS
WRITE or ERASE (block)
-10 ET
address asserted, and
WRITE data or ERASE
CONFIRM issued
t VPS1
t AS
t VPS2
t RHS
MAX
WRITE/ERASE CYCLE
Data-in
CMD/
A
IN
UNITS
[Unlock boot block]
[Unlock boot block]
SMART 3 BOOT BLOCK FLASH MEMORY
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t AH
[3.3V V
[5V V
t DH
t WED1/2/3/4
28
PP
t WB
PP
]
]
SYMBOL
t
t
t
t
t
t
t
t
t
t
VPS2
RS
RHS
WED1
WED2
WED3
WED4
WB
VPH
RHH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
(SR7=0)
Status
executed, status register
checked for completion
WRITE or ERASE
(SR7=1)
1,000
Status
MIN
t VPH
t RHH
100
200
300
300
600
200
6
0
0
-9
MAX
Command for next
operation issued
1,000
MIN
100
200
300
300
600
200
©2000, Micron Technology, Inc.
6
0
0
-10 ET
DON’T CARE
CMD
in
MAX
2Mb
UNITS
ms
ms
ms
ns
ns
ns
ns
ns
ns
s

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