MT28C256532W18S Micron Semiconductor Products, Inc., MT28C256532W18S Datasheet - Page 9

• Manufacturer Part Number: MT28C256532W18S
• Description: 256Mb Multibank Burst Flash 32Mb/64Mb Async/page Cellularram Combo, 88-Ball Fbga
• Manufacturer: Micron Semiconductor Products, Inc.

Part Numbering Information
eral different combinations of features (see Figure 4).
Table 2:
09005aef80bcd58d
MT28C256564W18S_A.fm - Rev. A, Pub 6/03 EN
PART NUMBER
MT28C256532W18SFT-705 BTWT
MT28C256532W18SFT-705 TTWT
Micron’s low-power devices are available with sev-
Micron Technology
Flash Family
28C = Dual-Supply Flash/CellularRAM Combo
Density/Organization/Banks
256 = 256Mb (8,192K x 16)
CellularRAM Density
64 = 64Mb CellularRAM (4 Meg x 16)
32 = 32Mb CellularRAM (2 Meg x 16)
Flash Read Mode Operation
W = Flash Async/Page/Burst Read
Operating Voltage Range
18 = 1.7V–1.95V Vcc
CE Select/Special Mark
S = Single CE Flash with Asynchronous PSRAM
bank x = 5 Multibank 32 Banks
Valid Part Number Combinations
(all banks have the same dimensions)
MT 28C 2565 64 W18 S FT -70 5 BB WT ES
32Mb/64Mb ASYNC/PAGE CellularRAM COMBO
Figure 4: Part Number Chart
ACCESS TIME
(ns)
-70
-70
9
256Mb MULTIBANK BURST FLASH
Valid combinations of features and their correspond-
ing part numbers are listed in Table 2.
BOOT BLOCK STARTING
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Bottom/Top
ADDRESS
Top/Top
Production Status
Blank = Production
Operating Temperature Range
Boot Block Starting Address
BB = Bottom boot/Bottom boot
BT = Bottom boot/Top boot
TT = Top boot/Top boot
TB = Top boot/Bottom boot
Burst Mode Frequency
5 = 54 MHz
6 = 66 MHz
Access Time
-60 = 60ns
-70 = 70ns
Package Code
FT = 80-ball FBGA with eight
WT = Wireless (-25ºC to +85ºC)
MS = Mechanical Samples
ES = Engineering Samples
support balls (8 x 10 grid)
BURST FREQUENCY
©2003 Micron Technology. Inc.
(MHz)
ADVANCE
54
54