HY27UH088GDM Hynix Semiconductor, HY27UH088GDM Datasheet - Page 20

• Manufacturer Part Number: HY27UH088GDM
• Description: 8G-Bit NAND Flash Memory
• Manufacturer: Hynix Semiconductor

Rev 0.5 / Oct. 2005
Operating
Current
Stand-by Current (TTL)
Stand-by Current (CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage
Output High Voltage Level
Output Low Voltage Level
Output Low Current (RB#)
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load (2.7V - 3.3V)
Output Load (3.0V - 3.6V)
Parameter
Sequential
Read
Program
Erase
Parameter
Table 8: DC and Operating Characteristics
Symbol
(RB#)
I
I
I
I
I
V
V
V
I
I
V
I
CC1
CC2
CC3
CC4
CC5
LO
OH
OL
LI
OL
IH
IL
Table 9: AC Conditions
V
CE#=V
V
PRE=WP#=0V/Vcc
PRE=WP#=0V/Vcc
OUT
Test Conditions
IN=
CE#=Vcc-0.2,
I
=0 to Vcc (max)
I
OH
0 to Vcc (max)
CE#=V
V
t
OL
RC
OL
IL
=-400uA
=2.1mA
=50ns
, I
=0.4V
-
-
-
-
OUT
IH
=0mA
,
8Gbit (1Gx8bit) NAND Flash
HY27UH088G(2/D)M Series
1 TTL GATE and CL=100pF
1 TTL GATE and CL=50pF
0.8xVcc
Min
-0.3
2.4
8
-
-
-
-
-
-
-
-
0V to Vcc
3.3Volt
Value
Vcc/2
5ns
3.3Volt
Typ
40
40
40
40
10
-
-
-
-
-
-
Preliminary
Vcc+0.
Max
± 40
± 40
xVcc
200
1.5
0.2
0.4
60
60
60
3
-
-
Unit
mA
mA
mA
mA
mA
uA
uA
uA
V
V
V
V
20