HY27UH088GDM Hynix Semiconductor, HY27UH088GDM Datasheet - Page 2
HY27UH088GDM
Manufacturer Part Number
HY27UH088GDM
Description
8G-Bit NAND Flash Memory
Manufacturer
Hynix Semiconductor
Datasheet
1.HY27UH088GDM.pdf
(53 pages)
- Current page: 2 of 53
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Revision History
Rev 0.5 / Oct. 2005
Revision
No.
0.4
0.5
7) Correct PKG dimension (TSOP PKG)
8) Delete the 1.8V device’s features.
9) Change AC Characteristics
- Errata is deleted.
- tR is change
10) Change DC Characteristics (Table 8)
- Operation Current
1) Delete Concurrent Operation.
Before
Before
Before
After
Before
After
After
After
I
Typ
30
CC1
40
0.050
0.100
60ns
50ns
tWC
25us
30us
CP
tR
I
Typ
30
40
CC2
I
Typ
30
40
CC3
35ns
25ns
tWP
± 20 ± 20
± 40 ± 40
Max
History
I
LI
Max
I
LO
20ns
15ns
tWH
8Gbit (1Gx8bit) NAND Flash
HY27UH088G(2/D)M Series
Sep. 16. 2005
Oct. 05. 2005
Draft Date
Preliminary
-Continued-
Preliminary
Preliminary
Remark
2
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