HY27UH088GDM Hynix Semiconductor, HY27UH088GDM Datasheet - Page 10

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HY27UH088GDM

Manufacturer Part Number
HY27UH088GDM
Description
8G-Bit NAND Flash Memory
Manufacturer
Hynix Semiconductor
Datasheet
Rev 0.5 / Oct. 2005
NOTE:
1. With the CE# don’t care option CE# high during latency time does not stop the read operation
CLE
H
H
X
X
X
X
L
L
L
L
L
ALE
H
H
L
L
L
L
L
X
X
X
X
CE#
L
H
(1)
X
X
X
L
L
L
L
L
L
Rising
Rising
Rising
Rising
Rising
WE#
H
H
X
X
X
X
Table 5: Mode Selection
Falling
RE#
H
H
H
H
H
H
X
X
X
X
0V/Vcc
WP#
X
X
H
H
H
X
X
H
H
L
Read Mode
Write Mode
Data Input
Sequential Read and Data Output
During Read (Busy)
During Program (Busy)
During Erase (Busy)
Write Protect
Stand By
8Gbit (1Gx8bit) NAND Flash
HY27UH088G(2/D)M Series
Command Input
Address Input(5 cycles)
Command Input
Address Input(5 cycles)
MODE
Preliminary
10

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