P10N20C Fairchild Semiconductor, P10N20C Datasheet

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P10N20C

Manufacturer Part Number
P10N20C
Description
Search -----> FQP10N20C
Manufacturer
Fairchild Semiconductor
Datasheet
www.DataSheet4U.com
©2003 Fairchild Semiconductor Corporation
FQP10N20C/FQPF10N20C
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supplies and motor controls.
Absolute Maximum Ratings
* Drain current limited by maximum junction temperature.
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
DSS
GSS
AS
AR
D
J
L
Symbol
Symbol
, T
JC
JS
JA
STG
G
D
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
TO-220
FQP Series
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
T
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
G
D
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 9.5A, 200V, R
• Low gate charge ( typical 20 nC)
• Low Crss ( typical 40.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
TO-220F
FQPF Series
FQP10N20C
FQP10N20C
0.57
1.74
62.5
DS(on)
9.5
6.0
0.5
38
72
-55 to +150
= 0.36
200
210
300
9.5
7.2
5.5
30
FQPF10N20C
FQPF10N20C
G
@V
! ! ! !
! ! ! !
9.5 *
6.0 *
38 *
3.33
62.5
0.3
38
QFET
--
GS
◀ ◀ ◀ ◀
◀ ◀ ◀ ◀
= 10 V
! ! ! !
! ! ! !
! ! ! !
! ! ! !
D
S
● ●
● ●
● ●
● ●
● ●
● ●
▲ ▲ ▲ ▲
▲ ▲ ▲ ▲
Units
Units
Rev. A, March 2003
W/°C
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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P10N20C Summary of contents

Page 1

... S FQP10N20C FQPF10N20C Units 200 V 9.5 9 6.0 6 210 mJ 9.5 A 7.2 mJ 5.5 V/ 0.57 0.3 W/°C -55 to +150 °C 300 °C FQP10N20C FQPF10N20C Units 1.74 3.33 °C/W 0.5 -- °C/W 62.5 62.5 °C/W Rev. A, March 2003 ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 3.5mH 9.5A ≤ 9.5A, di/dt ≤ 300A Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2003 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Parameter Test Conditions ...

Page 3

... Drain Current and Gate Voltage 1200 1000 800 600 400 ※ Note ; 200 MHz Figure 5. Capacitance Characteristics ©2003 Fairchild Semiconductor Corporation ※ Notes : 1. 250 μ s Pulse Test = 25 ℃ Drain-Source Voltage [ 10V GS ...

Page 4

... T , Junction Temperature [ Temperature Operation in This Area is Limited by R DS(on) 100 Drain-Source Voltage [V] DS for FQP10N20C 75 100 125 150 , Case Temperature [ ℃ Case Temperature 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0 4. 0.0 -100 -50 ...

Page 5

... Figure 11-1. Transient Thermal Response Curve for FQP10N20C ...

Page 6

... R R 10V 10V R R 10V 10V ©2003 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type 50KΩ 50KΩ as DUT as DUT 300nF 300nF DUT DUT Resistive Switching Test Circuit & ...

Page 7

... Driver ) ( Driver ) ( DUT ) ( DUT ) ( DUT ) ( DUT ) ©2003 Fairchild Semiconductor Corporation Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • ...

Page 8

... Package Dimensions www.DataSheet4U.com 1.27 0.10 2.54TYP [2.54 0.20 ©2003 Fairchild Semiconductor Corporation TO-220 9.90 0.20 (8.70) ø3.60 0.10 1.52 0.10 0.80 0.10 2.54TYP ] [2.54 ] 0.20 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A, March 2003 ...

Page 9

... Package Dimensions www.DataSheet4U.com MAX1.47 0.80 0.35 2.54TYP [2.54 ©2003 Fairchild Semiconductor Corporation (Continued) TO-220F 10.16 ø3.18 0.20 0.10 (7.00) 0.10 #1 0.10 2.54TYP ] [2.54 ] 0.20 0.20 9.40 0.20 2.54 0.20 (0.70) (1.00x45 ) +0.10 0.50 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, March 2003 ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ CMOS™ EnSigna™ ...

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