AP88N30W APEC, AP88N30W Datasheet - Page 4

• Manufacturer Part Number: AP88N30W
• Description: N-channel Enhancement Mode Power Mosfet
• Manufacturer: APEC

AP88N30W
1000
100
0.1
10
70
60
50
40
30
20
10
16
12
1
0
8
4
0
Fig 9. Maximum Safe Operating Area
1
0
0
Fig 11. Transfer Characteristics
Fig 7. Gate Charge Characteristics
V
DS
=10V
V
T
Single Pulse
DS
40
V
c
Q
GS
=25
, Drain-to-Source Voltage (V)
2
G
, Gate-to-Source Voltage (V)
, Total Gate Charge (nC)
o
V
10
I
C
DS
V
D
80
V
= 88 A
DS
= 160 V
DS
= 200 V
= 240 V
4
T
j
=25
120
100
o
C
6
160
T
j
=150
100us
1ms
10ms
100ms
1s
DC
o
C
1000
200
8
Fig 10. Effective Transient Thermal Impedance
Fig 8. Typical Capacitance Characteristics
10000
1000
100
0.001
10
0.01
1
0.1
0.00001
1
1
Fig 12. Gate Charge Waveform
10V
V
G
0.01
0.05
0.02
Single Pulse
0.0001
0.1
0.2
Duty factor=0.5
6
V
DS
Q
GS
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
0.001
11
Q
Q
G
Charge
GD
0.01
16
0.1
21
P
DM
Duty factor = t/T
Peak T
j
= P
t
DM
f=1.0MHz
T
26
1
x R
C
C
C
thjc
oss
rss
Q
iss
+ T
C
10
31
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