ap4407gm APEC, ap4407gm Datasheet
ap4407gm
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ap4407gm Summary of contents
Page 1
... J Thermal Data Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S Parameter Parameter 3 AP4407GM Pb Free Plating Product BV -30V DSS R 14mΩ DS(ON) I -10. Rating Units -30 ± 25 -10.7 -8.6 -50 2.5 0.02 W/℃ ...
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... AP4407GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV /ΔT Breakdown Voltage Temperature Coefficient DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... Fig 2. Typical Output Characteristics 1.80 =-10A 1.40 1.20 1.00 0.80 0. -50 Fig 4. Normalized On-Resistance 1.3 1.5 -50 Fig 6. Gate Threshold Voltage v.s. AP4407GM o C -10V -5.0V -4.5V -4.0V V =-3. Drain-to-Source Voltage (V) DS =-10A D = -10V 0 50 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 ...
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... AP4407GM 14 I =-10. =-24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...