AP88N30W APEC, AP88N30W Datasheet - Page 2

• Manufacturer Part Number: AP88N30W
• Description: N-channel Enhancement Mode Power Mosfet
• Manufacturer: APEC

THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
R
V
t
Q
Notes:
1.PW ≦ 10 µs, duty cycle ≦ 1%.
2.Pulse test
3.STch = 25℃，Tch ≦ 150℃
AP88N30W
Electrical Characteristics@T
Source-Drain Diode
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
gs
gd
rr
DSS
Symbol
Symbol
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
2
2
2
2
j
j
j
=25
=125
=25
o
C)
o
C)
o
C(unless otherwise specified)
2
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
f=1.0MHz
I
I
dI/dt=100A/µs
D
D
S
S
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
G
D
=88A, V
=20A, V
=88A
=44A
=3.4Ω
=10Ω,V
=10V, I
=10V, I
=300V, V
=300V, V
=240V
=150V
=15V
=0V, I
=10V, I
= ±30V, V
=10V
=0V
Test Conditions
Test Conditions
D
GS
GS
=10mA
D
D
D
GS
=1mA
=44A
=0V
=0V
=44A
GS
GS
=10V
DS
=0V
=0V
=0V
Min.
Min.
300
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8440 13500
1775
Typ.
Typ.
170
142
245
145
325
2.2
4.7
42
40
73
55
70
-
-
-
-
-
-
-
Max. Units
Max. Units
±0.1
200
250
4.5
3.3
1.5
48
1
-
-
-
-
-
-
-
-
-
-
-
-
mΩ
nC
nC
nC
µC
uA
uA
uA
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
S
V
2/4