AP01N60H APEC, AP01N60H Datasheet
AP01N60H
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AP01N60H Summary of contents
Page 1
... Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V Parameter AP01N60H/J Pb Free Plating Product BV 600V DSS R 8Ω DS(ON TO-252( TO-251(J) Rating Units 600 ± ...
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... AP01N60H/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... Fig 2. Typical Output Characteristics 150 - Fig 4. Normalized On-Resistance v.s. Junction Temperature -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. AP01N60H/J 10V o C 6.0V 5. Drain-to-Source Voltage (V) DS =0.8A =10V 0 50 100 Junction Temperature ( 100 ...
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... AP01N60H =1. =480V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics Single Pulse 0. 100 V , Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) r Fig 11. Switching Time Waveform 1000 ...