AP88N30W APEC, AP88N30W Datasheet - Page 3

• Manufacturer Part Number: AP88N30W
• Description: N-channel Enhancement Mode Power Mosfet
• Manufacturer: APEC

160
120
50
48
46
44
42
40
80
40
50
40
30
20
10
0
0
0.0
Fig 3. On-Resistance v.s. Gate Voltage
4
0
Fig 1. Typical Output Characteristics
T
Fig 5. Forward Characteristic of
C
=25
V
0.2
5
o
DS
V
C
V
SD
4.0
, Drain-to-Source Voltage (V)
GS
Reverse Diode
, Source-to-Drain Voltage (V)
T
Gate-to-Source Voltage (V)
0.4
6
j
=150
o
C
8.0
0.6
7
T
0.8
8
I
I
C
D
D
=25
=44A
12.0
=22A
T
j
V
o
=25
C
9
G
1
=5.0V
o
8.0V
7.0V
6.0V
10V
C
16.0
1.2
10
100
2.8
2.3
1.8
1.3
0.8
0.3
Fig 2. Typical Output Characteristics
1.4
1.2
0.8
0.6
0.4
80
60
40
20
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
0
1
0.0
-50
-50
T
V
I
C
D
=150
G
=44A
=10V
Junction Temperature
v.s. Junction Temperature
V
4.0
o
DS
C
T
T
0
0
j
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
,Junction Temperature (
8.0
50
50
12.0
AP88N30W
100
100
V
o
16.0
o
C)
C)
G
8.0V
7.0V
6.0V
=5.0V
10V
20.0
150
150
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