AP88N30W APEC, AP88N30W Datasheet
AP88N30W
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AP88N30W Summary of contents
Page 1
... Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V Parameter AP88N30W RoHS-compliant Product BV 300V DSS R 48mΩ DS(ON) I 88A D G TO- Rating Units 300 ±30 ...
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... AP88N30W Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs Drain-Source Leakage Current (T I Drain-Source Leakage Current (T DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...
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... I =44A =10V G 2.3 1.8 1.3 0.8 0.3 - Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 0.8 0.6 0.4 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP88N30W 10V o C 8.0V 7.0V 6.0V V =5.0V G 4.0 8.0 12.0 16.0 20.0 , Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 o T ,Junction Temperature ( C) j 150 ...
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... AP88N30W 160 200 240 120 Q , Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 70 V =10V ...