MX26F128J3 ETC-unknow, MX26F128J3 Datasheet - Page 6

• Manufacturer Part Number: MX26F128J3
• Description: Macronix Nbit Tm Memory Family 128m [x8/x16] Single 3v Page Mode Eliteflash Tm Memory
• Manufacturer: ETC-unknow

NOTES:
1. See Table 1 on page 7 for valid CE configurations.
2. OE and WE should never be enabled simultaneously.
3. DQ refers to Q0-Q7 if BYTE is low and Q0-Q15 if BYTE is high.
4. Refer to DC Characteristics. When VPEN < VPENLK , memory contents can be read, but not altered.
5. X can be VIL or VIH for control and address pins, and VPENLK or VPENH for VPEN . See DC Characteristics for
6. In default mode, STS is VOL when the WSM is executing internal block erase, program, or lock-bit configuration
7. High Z will be VOH with an external pull-up resistor.
8. See Section , "Read Identifier Codes" for read identifier code data.
9. See Section , "Read Query Mode Command" for read query data.
10.Command writes involving block erase, program, or lock-bit configuration are reliably executed when VPEN=
11.Refer to Table 3 on page 10 for valid DIN during a write operation.
P/N:PM0960
Table 2. Bus Operations
Command
Sequence
Notes
RESET
CE0,CE1,CE2(1) Enabled Enabled Disabled X
OE (2)
WE (2)
Address
VPEN
Q (3)
STS
(default mode)
VPENLK and VPENH voltages.
algorithms. It is VOH when the WSM is not busy, or in reset/power-down mode.
VPENH and VCC is within specification.
VIH
VIH
Read
Array
4,5,6
VIL
X
X
Data out High Z
High Z
(7)
Output
Disable
VIH
VIH
VIH
X
X
X
VIH
X
X
X
X
High Z
X
Standby RESET Read ID Read
VIL
X
Mode/
Power
Down
Mode
X
X
X
High Z Note 8
High Z High Z
(7)
6
VIH
Enabled Enabled Enabled
VIL
VIH
See
Figure 2
X
(7)
Query
VIH
VIL
VIH
See
X
High Z
(7)
Note 9
Table 6
MX26F128J3
Read
Status
(WSM off) (WSM on)
VIH
VIL
VIH
X
X
Data out
Enabled
Read
Status
VIH
VIL
VIH
X
X
Q7=Data out Data in
Q15-8=High Z
Q6-0=High Z
REV. 1.1,OCT. 18, 2004
Enabled
Write
6,10,11
VIH
VIH
VIL
X
VPENH
X