MX26F128J3 ETC-unknow, MX26F128J3 Datasheet - Page 28

• Manufacturer Part Number: MX26F128J3
• Description: Macronix Nbit Tm Memory Family 128m [x8/x16] Single 3v Page Mode Eliteflash Tm Memory
• Manufacturer: ETC-unknow

P/N:PM0960
Figure 6. Byte/Word Programming Flowchart
FULL STATUS CHECK PROCEDURE
Byte/Word Program Successful
Byte/Word Program Complete
Full Status Check if Desired
Read Status Register
Data (See Above)
Status Register
and Address
Write 40H,
Write Data
Address
Read
SR.7=
SR.3=
SR.1=
SR.4=
Start
1
0
0
0
0
1
1
1
Device Protect Error
VPP Range Error
Programming Error
28
Bus
Operation
Write
Write
Read
(Note 1)
Standby
1. Toggling OE (low to high to low) updates the status
register. This can be done in place of issuing the Read
Status Register command. Repeat for subsequent pro-
gramming operations.
SR full status check can be done after each program
operation, or after a sequence of programming opera-
tions.
Write FFH after the last program operation to place
device in read array mode.
Bus
Operation
Standby
Standby
Standby
Toggling OE (low to high to low) updates the status
register. This can be done in place of issuing the Read
Status Register command. Repeat for subsequent pro-
gramming operations.
SR.4, SR.3, and SR.1 are only cleared by the Clear
Status Register Command in cases where multiple lo-
cation are programmed before full status is checked.
If an error is detected, clear the status register before
attempting retry or other error recovery.
Command
Setup Byte/
Word Program Addr=Location to Be
Byte/Word
Program
Command
MX26F128J3
Comments
1=Programming to Voltage
Error Detect
1=Device Protect Detect
RP=VIH, Block Lock-Bit is
Set Only required for
systems
1=Programming Error
Check SR.3
Check SR.1
Check SR.4
Comments
Data=40H
Programmed
Data=Data to Be
Programmed
Addr=Location to Be
Programmed
Status Register Data
1=WSM Ready
0=WSM Busy
Check SR.7
REV. 1.1,OCT. 18, 2004