MX26F128J3 ETC-unknow, MX26F128J3 Datasheet - Page 15

• Manufacturer Part Number: MX26F128J3
• Description: Macronix Nbit Tm Memory Family 128m [x8/x16] Single 3v Page Mode Eliteflash Tm Memory
• Manufacturer: ETC-unknow

Device Geometry Definition
This field provides critical details of the eLiteFlash
P/N:PM0960
Table 10. Device Geometry Definition
Device Geometry Definition
Offset Length
27h
28h
2Ah
2Ch
2Dh
Address
27:
28:
29:
2A:
2B:
2C:
2D:
2E:
2F:
30:
1
2
2
1
4
"n" such that device size = 2
eLiteFlash
x16 async(28:01,29:00), x8/x16 async(28:02,29:00)
"n" such that maximum number of bytes in write buffer = 2
Number of erase block regions within device:
1. x = 0 means no erase blocking; the device erases in "bulk"
2. x specifies the number of device or partition regions with one or
more contiguous same-size erase blocks
3. Symmetrically blocked partitions have one blocking region
4. Partition size = (total blocks) x (individual block size)
Erase Block Region 1 Information
bits 0-15 = y, y+1 = number of identical-size erase blocks
bits 16-31 = z, region erase block(s) size are z x 256 bytes
Description
128M
--18
--02
--00
--05
--00
--01
--7F
--00
--00
--02
TM
memory device interface: x8 async(28:00,29:00),
TM
n
in number of bytes
memory device geometry.
15
MX26F128J3
n
2A:
2B:
2C:
2D:
2E:
2F:
27:
28:
29:
30:
Code See Table
Below
REV. 1.1,OCT. 18, 2004
--02
--00
--05
--00
--01
x8/x16
32
1