MBM29PDS322TE Fujitsu Microelectronics, Inc., MBM29PDS322TE Datasheet - Page 58

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MBM29PDS322TE

Manufacturer Part Number
MBM29PDS322TE
Description
Flash Memory 32m 2m X 16 Bit Page Dual Operation
Manufacturer
Fujitsu Microelectronics, Inc.
Datasheet
58
MBM29PDS322TE/BE
*: DQ
7
is rechecked even if DQ
No
Figure 22 Data Polling Algorithm
5
(DQ
(DQ
DQ
DQ
= “1” because DQ
Addr.
Addr.
Read Byte
Read Byte
DQ
7
7
Start
7
7
Fail
5
to DQ
to DQ
*
Data?
Data?
No
1?
VA
Yes
VA
No
0
0
10/11
)
)
Yes
Yes
7
may change simultaneously with DQ
Pass
VA=Address for programming
=Any of the sector addresses
=Any of the sector address within
the sector being erased during
sector erase or multiple sector
erases operation
within the sector not being
multiple sector erases
protected during sector erase or
operation.
5
.

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