MBM29PDS322TE Fujitsu Microelectronics, Inc., MBM29PDS322TE Datasheet - Page 40

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MBM29PDS322TE

Manufacturer Part Number
MBM29PDS322TE
Description
Flash Memory 32m 2m X 16 Bit Page Dual Operation
Manufacturer
Fujitsu Microelectronics, Inc.
Datasheet
40
MBM29PDS322TE/BE
Note: Test conditions T
Sector Erase Time
Word Programming Time
Chip Programming Time
Program/Erase Cycle
Input Capacitance
Output Capacitance
Control Pin Capacitance
WP/ACC Pin Capacitance
FBGA PIN CAPACITANCE
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Parameter
A
= 25°C , f = 1.0 MHz
100,000
Min.
Symbol
C
C
C
C
OUT
IN2
IN3
IN
Limits
Typ.
10/11
V
V
V
V
16
1
OUT
IN
IN
IN
= 0
= 0
= 0
= 0
Condition
Max.
360
100
10
cycle
Unit
s
s
s
Typ.
TBD
TBD
TBD
TBD
Excludes programming time
prior to erasure
Excludes system-level
overhead
Excludes system-level
overhead
Value
Comments
Max.
TBD
TBD
TBD
TBD
Unit
pF
pF
pF
pF

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