MBM29PDS322TE Fujitsu Microelectronics, Inc., MBM29PDS322TE Datasheet - Page 45

no-image

MBM29PDS322TE

Manufacturer Part Number
MBM29PDS322TE
Description
Flash Memory 32m 2m X 16 Bit Page Dual Operation
Manufacturer
Fujitsu Microelectronics, Inc.
Datasheet
Notes: 1.PA is address of the memory location to be programmed.
2.PD is data to be programmed at word address.
3.DQ
4.D
5.Figure indicates last two bus cycles out of four bus cycle sequence.
Address
WE
OE
CE
Data
OUT
Figure 7 Alternate CE Controlled Program Operation Timing Diagram
7
is the output of the complement of the data written to the device.
is the output of the data written to the device.
t
t
WS
GHEL
3rd Bus Cycle
555h
t
WC
t
CP
t
DS
A0h
t
CPH
t
t
DH
AS
t
WH
PA
t
AH
PD
MBM29PDS322TE/BE
Data Polling
t
WHWH1
DQ
PA
7
D
OUT
10/11
45

Related parts for MBM29PDS322TE