MBM29PDS322TE Fujitsu Microelectronics, Inc., MBM29PDS322TE Datasheet - Page 25

• Manufacturer Part Number: MBM29PDS322TE
• Description: Flash Memory 32m 2m X 16 Bit Page Dual Operation
• Manufacturer: Fujitsu Microelectronics, Inc.

Sector Erase
Sector erase is a six bus cycle operation. There are two “unlock” write cycles. These are followed by writing the
“set-up” command. Two more “unlock” write cycles are then followed by the Sector Erase command. The sector
address (any address location within the desired sector) is latched on the falling edge of CE or WE whichever
happens later, while the command (Data = 30h) is latched on the rising edge of CE or WE which happens first.
After time-out of “t
Multiple sectors may be erased concurrently by writing the six bus cycle operations on Table4. This sequence
is followed with writes of the Sector Erase command to addresses in other sectors desired to be concurrently
erased. The time between writes must be less than “t
erasure will not start. It is recommended that processor interrupts be disabled during this time to guarantee this
condition. The interrupts can be re-enabled after the last Sector Erase command is written. A time-out of “t
from the rising edge of last CE or WE whichever happens first will initiate the execution of the Sector Erase
command(s). If another falling edge of CE or WE, whichever happens first occurs within the “t
window the timer is reset. (Monitor DQ
DQ
that case, restart the erase on those sectors and allow them to complete. (Refer to the Write Operation Status
section for Sector Erase Timer operation.) Loading the sector erase buffer may be done in any sequence and
with any number of sectors (0 to 70).
Sector erase does not require the user to program the device prior to erase. The device automatically program
all memory locations in the sector(s) to be erased prior to electrical erase (Preprogram function). When erasing
a sector or sectors the remaining unselected sectors are not affected. The system is not required to provide any
controls or timings during these operations.
The system can determine the status of the erase operation by using DQ
RY/BY.
The sector erase begins after the “t
the last sector erase command pulse and terminates when the data on DQ
section.) at which time the device returns to the read mode. Data polling and Toggle Bit must be performed at
an address within any of the sectors being erased.
Multiple Sector Erase Time; [Sector Erase Time + Sector Program Time (Preprogramming)] Number of Sector
Erase
In case of multiple sector erase across bank boundaries, a read from bank (read-while-erase) can not perform.
Figure 21 illustrates the Embedded Erase
3
, Sector Erase Timer.) Resetting the device once execution has begun will corrupt the data in the sector. In
TOW
” from the rising edge of the last sector erase command, the sector erase operation will begin.
TOW
3
” time out from the rising edge of CE or WE whichever happens first for
to determine if the sector erase timer window is still open, see section
TM
Algorithm using typical command strings and bus operations.
MBM29PDS322TE/BE
TOW
” otherwise that command will not be accepted and
7
7
(Data Polling), DQ
is “1” (See Write Operation Status
TOW
6
(Toggle Bit), or
” time-out
10/11
TOW
”
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