FJC1386 Fairchild Semiconductor, FJC1386 Datasheet - Page 3

• Manufacturer Part Number: FJC1386
• Description: Fjc1386 Pnp Epitaxial Silicon Transistor
• Manufacturer: Fairchild Semiconductor

FJC1386 Rev. C1
Typical Performance Characteristics
Figure 3. Collector-Emitter Saturation Voltage
-100m
-1400
-1200
-1000
-10m
-800
-600
-400
-200
-1m
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
-0.0
-10
Figure 5. Base-Emitter On Voltage
-1
0
-1m
-0.0
0
Figure 1. Static Characteristic
-2
-0.2
V
V
CE
BE
[V], COLLECTOR-EMITTER VOLTAGE
-10m
I
C
-4
[V], BASE-EMITTER VOLTAGE
[A], COLLECTOR CURRENT
-0.4
125
Ta = 25
°
C
-6
-0.6
25
o
C
-100m
Ta = 125
°
C
-8
-0.8
Ta = - 40
-10
o
C
- 40
°
-1.0
C
-12
o
-1
C
I
I
I
I
I
I
I
V
B
B
B
B
B
B
B
I
CE
C
= -7mA
= -6mA
= -5mA
= -3mA
= -2mA
= -1mA
= -4mA
-1.2
= 10 I
= - 2V
-14
B
-16
-1.4
-10
3
Figure 4. Base-Emitter Saturation Voltage
1000
100
-0.1
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-10
10
-1
-10m
-1m
0
Figure 2. DC Current Gain
Ta = - 40
Figure 6. Power Derating
Ta = 125
25
Ta = 25
Ta = - 40
Ta = 125
T
I
-10m
I
o
C
C
a
o
C
C
[
[A], COLLECTOR CURRENT
[A], COLLECTOR CURRENT
°
50
C], AMIBIENT TEMPERATURE
o
-100m
C
o
o
C
C
Ta = 25
75
-100m
o
C
100
-1
125
-1
V
I
C
CE
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150
= 10 I
= - 2V
B
175
-10
-10