FJA3835 Fairchild Semiconductor, FJA3835 Datasheet - Page 2

• Manufacturer Part Number: FJA3835
• Description: Fja3835 Npn Epitaxial Silicon Transistor
• Manufacturer: Fairchild Semiconductor

©2003 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 3. Collector-Emitter Saturation Voltage
0.01
100
0.1
1E-3
10
0.01
1
0.1
0.1
7
6
5
4
3
2
1
0
1
0.01
0
Single Pulse
T
I
C
C
I
=25[
C
T
I
MAX. (Pulse)
Figure 5. Safe Operating Area
Figure 1. Static Characterstic
C
C
T
T
MAX. (DC)
C
C
= - 25
= 10 I
= 25
= 75
o
V
V
C]
CE
CE
[V], COLLECTOR-EMITTER VOLTAGE
o
o
o
[V], COLLECTOR-EMITTER VOLTAGE
B
C
C
C
I
C
2
1
[A], COLLECTOR CURRENT
0.1
T
C
= 125
o
C
4
10
1
100ms
10ms
6
100
I
B
I
B
= 35mA
I
= 10mA
B
= 5mA
10
8
Figure 4. Base-Emitter Saturation Voltage
0.1
1000
140
120
100
10
100
80
60
40
20
1
0.01
10
0
0.01
0
I
C
T
T
V
= 10 I
T
C
C
CE
C
= 125
= - 25
= 75
Figure 2. DC current Gain
= 4V
25
Figure 6. Power Derating
B
T
o
o
o
C
C
C
C
I
= - 25
C
T
I
C
[A], COLLECTOR CURRENT
C
T
T
50
C
[A], COLLECTOR CURRENT
= 25
C
[
o
0.1
0.1
o
= 75
C
C], CASE TEMPERATURE
o
C
T
o
T
C
C
C
= 125
= 25
75
o
o
C
C
100
1
1
125
150
Rev. A, December 2003
10
10
175