FQD3N50C Fairchild Semiconductor, FQD3N50C Datasheet - Page 2

no-image

FQD3N50C

Manufacturer Part Number
FQD3N50C
Description
Fqd3n50c/fqu3n50c 500v N-channel Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQD3N50CTM
Quantity:
2 500
FQD3N50C/FQU3N50C Rev. A
Package Marking and Ordering Information
Electrical Characteristics
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 58mH, I
3. I
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Off Characteristics
BV
∆BV
∆T
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
d(on)
d(off)
DSS
GSSF
GSSR
r
f
S
SM
rr
FS
GS(th)
DS(on)
iss
oss
rss
SD
SD
g
gs
gd
rr
Device Marking
J
DSS
Symbol
≤ 2.5A, di/dt ≤ 200A/µs, V
DSS
FQD3N50C
FQD3N50C
FQU3N50C
/
AS
= 2.5A, V
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
DD
= 50V, R
DD
FQD3N50CTM
≤ BV
FQD3N50CTF
FQU3N50C
G
Device
DSS,
Parameter
= 25 Ω, Starting T
Starting T
J
T
= 25°C
C
J
= 25°C unless otherwise noted
= 25°C
Package
D-PAK
D-PAK
I-PAK
V
I
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= 250 µA, Referenced to 25°C
= 25 Ω
/ dt = 100 A/µs
= 0 V, I
= 500 V, V
= 400 V, T
= 30 V, V
= -30 V, V
= V
= 10 V, I
= 40 V, I
= 25 V, V
= 250 V, I
= 400 V, I
= 10 V
= 0 V, I
= 0 V, I
GS
2
Test Conditions
, I
D
S
S
D
D
D
= 250 µA
= 2.5 A
= 3 A,
GS
DS
D
D
= 250 µA
DS
= 1.25 A
GS
C
= 1.25 A
= 2.5 A,
= 2.5 A,
Reel Size
= 125°C
= 0 V
= 0 V,
= 0 V
380mm
380mm
= 0 V
-
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Tape Width
Min.
500
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
16mm
16mm
-
Typ.
280
170
0.7
2.1
1.5
8.5
1.5
5.5
0.7
50
10
25
35
25
10
--
--
--
--
--
--
--
--
--
Max.
-100
100
365
4.0
2.5
2.5
1.4
10
10
65
11
30
60
80
60
13
--
--
--
--
--
--
--
1
Quantity
www.fairchildsemi.com
2500
2500
70
Units
V/°C
µA
µA
nA
nA
pF
pF
pF
nC
nC
nC
µC
ns
ns
ns
ns
ns
V
V
S
A
A
V

Related parts for FQD3N50C