FQB32N12V2 Fairchild Semiconductor, FQB32N12V2 Datasheet - Page 4

• Manufacturer Part Number: FQB32N12V2
• Description: Fqb32n12v2/fqi32n12v2 120v N-channel Mosfet
• Manufacturer: Fairchild Semiconductor

©2003 Fairchild Semiconductor Corporation
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
10
10
10
10
10
-100
-1
3
2
1
0
10
Figure 9. Maximum Safe Operating Area
Figure 7. Breakdown Voltage Variation
0
-50
Operation in This Area
is Limited by R
T
V
J
, Junction Temperature [
DS
vs Temperature
, Drain-Source Voltage [V]
0
1 0
1 0
1 0
DS(on)
※ Notes :
- 1
- 2
1 0
0
1. T
2. T
3. Single Pulse
- 5
C
J
10
= 175
= 25
1
50
D = 0 . 5
0 . 2
0 . 0 5
0 . 0 2
0 . 0 1
0 . 1
DC
o
C
o
(Continued)
C
Figure 11. Transient Thermal Response Curve
10 ms
s i n g le p u l s e
100
1 0
o
- 4
C]
1 ms
※ Notes :
1. V
2. I
t
1
D
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
GS
= 250 μ A
150
= 0 V
100 s
10
1 0
2
- 3
200
1 0
- 2
35
30
25
20
15
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
5
0
25
-100
Figure 10. Maximum Drain Current
1 0
Figure 8. On-Resistance Variation
※ N o te s :
- 1
50
1 . Z
2 . D u t y F a c t o r , D = t
3 . T
-50
P
DM
θ J C
J M
vs Case Temperature
( t) = 1 .0 ℃ / W M a x .
- T
T
T
J
C
, Junction Temperature [
C
75
, Case Temperature [ ℃ ]
= P
0
vs Temperature
1 0
t
1
t
D M
2
0
* Z
1
100
/ t
θ J C
50
2
( t)
1 0
125
100
1
o
C]
※ Notes :
1. V
2. I
150
150
D
GS
= 16 A
= 10 V
Rev. A, December 2003
175
200