NDB6020 Fairchild Semiconductor, NDB6020 Datasheet - Page 2

• Manufacturer Part Number: NDB6020
• Description: N-channel Logic Level Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Electrical Characteristics
Symbol
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DSS
GSSF
GSSR
D(on)
D(on)
r
D(off)
f
FS
GS(th)
DS(ON)
g
gs
gd
iss
oss
rss
DSS
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(Note 1)
(Note 1)
(T
C
= 25°C unless otherwise noted)
Conditions
V
V
V
V
V
V
V
V
V
V
V
V
R
V
I
f = 1.0 MHz
D
GS
DS
GS
GS
DS
GS
GS
GS
DS
DS
DD
GS
DS
= 35 A, V
L
= 0.5
= 16 V, V
= V
= 5 V, I
= 10 V, V
= 15 V,
= 0 V, I
= 8 V, V
= -8 V, V
= 4.5 V, I
= 2.7 V, I
= 4.5 V, V
= 20 V, I
= 5 V, R
GS
, I
D
D
D
DS
GEN
= 250 µA
= 18 A
GS
DS
= 250 µA
D
D
D
GS
DS
GS
= 0 V
= 18 A
= 16 A
= 35 A,
= 5 V
= 0 V
= 0 V
= 10
= 5 V
= 0 V,
T
J
T
T
= 55°C
J
J
= 125°C
= 125°C
Min
0.4
0.2
20
60
0.019
0.024
0.024
1170
0.62
0.35
Typ
610
180
148
233
29
98
32
11
7
6
0.023
0.032
0.028
Max
-100
100
300
200
450
0.7
10
20
45
1
1
NDP6020 Rev.C
Units
mA
µA
nA
nA
pF
pF
pF
nS
nS
nS
nS
nC
nC
nC
V
V
A
S