FQT5N20 Fairchild Semiconductor, FQT5N20 Datasheet - Page 3

• Manufacturer Part Number: FQT5N20
• Description: 200v N-channel Mosfet
• Manufacturer: Fairchild Semiconductor

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
10
350
300
250
200
150
100
10
50
7
6
5
4
3
2
1
0
0
-1
0
10
0.0
10
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
-1
-1
Top :
Bottom :
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
1.5
15 V
10 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
GS
V
V
DS
DS
3.0
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
10
10
, Drain Current [A]
0
0
C
C
C
oss
iss
rss
4.5
V
GS
= 20V
6.0
V
GS
 Notes :
C
C
C
1. 250 s Pulse Test
2. T
iss
oss
rss
= 10V
10
10
= C
= C
= C
C
1
1
= 25
gs
gd
ds
+ C
+ C
 Notes :
1. V
2. f = 1 MHz
7.5
gd
gd
(C
GS
ds
= 0 V
= shorted)
9.0
10
10
10
10
12
10
-1
8
6
4
2
0
-1
0
0
0.2
2
0
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics
Variation vs. Source Current
0.4
1
150
4
V
V
Q
and Temperature
GS
SD
150
25
G
0.6
2
, Source-Drain Voltage [V]
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
V
DS
V
DS
V
= 160V
25
DS
= 100V
= 40V
0.8
6
3
-55
1.0
4
 Notes :
 Notes :
1. V
2. 250 s Pulse Test
1. V
2. 250 s Pulse Test
 Note : I
8
DS
GS
= 40V
= 0V
1.2
5
D
= 4.5 A
1.4
Rev. A, May 2001
10
6