NDH8502P Fairchild Semiconductor, NDH8502P Datasheet - Page 4

• Manufacturer Part Number: NDH8502P
• Description: Dual P-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Typical Electrical Characteristics
-10
Figure 1. On-Region Characteristics.
-8
-6
-4
-2
Figure 3. On-Resistance Variation with
0
1.6
1.4
1.2
0.8
0.6
Figure 5. Transfer Characteristics.
-10
-1
-8
-6
-4
-2
1
0
-50
0
V
V
GS
Temperature.
DS
V
I
= -10V
D
GS
-25
= -10V
= -2.2A
= -10V
-2
-1
V
GS
V
0
T , JUNCTION TEMPERATURE (°C)
-6.0
J
DS
, GATE TO SOURCE VOLTAGE (V)
, DRAIN-SOURCE VOLTAGE (V)
-5.0
2 5
-3
-2
-4.5
T = -55°C
5 0
J
-3
-4
-4.0
7 5
25°C
-3.5
100
125°C
-4
-5
125
-3.0
150
-5
-6
Figure 4. On-Resistance Variation with Drain
1.8
1.5
1.2
0.9
0.6
0.3
1.2
1.1
0.9
0.8
0.7
2.5
1.5
0.5
Figure 2. On-Resistance Variation with Gate
1
Figure 6. Gate Threshold Variation with
- 5 0
0
3
2
1
0
V
V
GS
Current and Temperature.
GS
Voltage and Drain Current.
Temperature.
= -10V
- 2 5
= -3.5V
-2
-2
0
T , JUNCTION TEMPERATURE (°C)
J
-4.0
T = 125°C
I
J
D
I
D
, DRAIN CURRENT (A)
2 5
, DRAIN CURRENT (A)
-4
-4
-4.5
5 0
-5.0
25°C
-6
-6
7 5
-5.5
I
D
V
1 0 0
DS
= -250µA
-6.0
-55°C
= V
-8
-8
G S
-10
1 2 5
NDH8502P Rev.C
1 5 0
-10
-10