NDH8502P Fairchild Semiconductor, NDH8502P Datasheet
NDH8502P
Related parts for NDH8502P
NDH8502P Summary of contents
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... High density cell design for extremely low R Exceptional on-resistance and maximum DC current capability NDH8502P -30 ±20 -2.2 (Note 1) -10 0.8 (Note 1) -55 to 150 156 (Note 1) 40 (Note 1) December 1996 @ DS(ON Units °C °C/W °C/W NDH8502P Rev.C ...
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... GS GEN Min Typ Max - 55°C J 100 -100 -1 -1 125°C -0.8 -1.2 -2.2 J 0.1 0. 125°C 0.14 0.2 J 0.17 0.18 -10 -4 3.8 340 218 100 10.9 14.5 1.4 3.6 NDH8502P Rev.C Units V µA µ ...
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... C/W when mounted on a 0.0025 in pad of 2oz copper. Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0 25°C unless otherwise noted) A Conditions -0. Min Typ Max -0.67 -0.76 (Note 2) Units A -1 guaranteed by JC NDH8502P Rev.C ...
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... I , DRAIN CURRENT (A) D Voltage and Drain Current. = -10V T = 125°C J 25°C -55° DRAIN CURRENT ( -250µ JUNCTION TEMPERATURE (°C) J Temperature. -10 -10 - NDH8502P Rev.C ...
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... BODY DIODE FORWARD VOLTAGE (V) SD with Current and Temperature . V = -10V = -2. -15V GATE CHARGE (nC off t t d(off PULSE WIDTH . -20V INVERTED NDH8502P Rev.C ...
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... Figure 14. Maximum Safe Operating Area. 0.01 0 TIME (sec -4. See Note 25° DRAIN-SOURCE VOLTAGE ( ( See Notes 1 JA P(pk ( Duty Cycle NDH8502P Rev.C ...
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... NDH8502P Rev.C ...