FGI40N60SF Fairchild Semiconductor, FGI40N60SF Datasheet

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FGI40N60SF

Manufacturer Part Number
FGI40N60SF
Description
Fgi40n60sf 600v, 40a Field Stop Igbt
Manufacturer
Fairchild Semiconductor
Datasheet
©2008 Fairchild Semiconductor Corporation
FGI40N60SF Rev.A
Absolute Maximum Ratings
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
FGI40N60SF
600V, 40A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: V
• High input impedance
• Fast switching
• RoHS compliant
Applications
• Induction Heating, UPS, SMPS, PFC
V
V
I
I
P
T
T
T
R
R
C
CM (1)
stg
J
L
CES
GES
D
θJC
θJA
Symbol
Symbol
(IGBT)
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
D
S
CE(sat)
=2.3V @ I
I
2
Description
-PAK
Parameter
C
= 40A
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
1
= 25
= 100
= 25
= 25
= 100
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new ses-
ries of Field Stop IGBTs offer the optimum performance for
Induction Heating, UPS, SMPS and PFC applications where
low conduction and switching losses are essential.
o
o
o
C
C
C
o
o
C
C
Typ.
-
-
-55 to +150
-55 to +150
Ratings
± 20
600
120
290
300
116
80
40
Max.
0.43
62.5
August 2008
www.fairchildsemi.com
Units
Units
o
o
C/W
C/W
o
o
o
W
W
V
V
A
A
A
C
C
C
tm

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FGI40N60SF Summary of contents

Page 1

... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2008 Fairchild Semiconductor Corporation FGI40N60SF Rev.A General Description Using Novel Field Stop IGBT Technology, Fairchild’s new ses- ries of Field Stop IGBTs offer the optimum performance for = 40A C Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential ...

Page 2

... E Turn-Off Switching Loss off E Total Switching Loss ts Q Total Gate Charge g Q Gate to Emitter Charge ge Q Gate to Collector Charge gc FGI40N60SF Rev. A Packaging Package Type Qty per Tube I2-PAK Tube T = 25°C unless otherwise noted C Test Conditions = 0V 250µ 0V 250µ ...

Page 3

... Collector-Emitter Voltage, V Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 4.0 Common Emitter V = 15V GE 3.5 3.0 2.5 2.0 1.5 1 Collector-EmitterCase Temperature, T FGI40N60SF Rev. A Figure 2. Typical Output Characteristics 120 T 15V 100 80 12V 60 40 10V 4.5 6.0 0.0 [V] CE Figure 4. Transfer Characteristics 120 ...

Page 4

... Collector-Emitter Voltage, V Figure 11. SOA Characteristics 400 100 10 1 Single Nonrepetitive Pulse 0.1 Curves must be derated linearly with increase in temperature 0. Collector-Emitter Voltage, V FGI40N60SF Rev. A Figure 8. Saturation Voltage vs Common Emitter [V] GE Figure 10 ...

Page 5

... Figure 17. Switching Loss vs. Collector Current 30 Common Emitter Ω 15V 125 0 Collector Current, I FGI40N60SF Rev. A Figure 14. Turn-on Characteristics vs. 500 t 100 d(off Ω Figure 16. Switching Loss vs. Gate Resistance 10 t d(off 0.2 0.3 60 ...

Page 6

... Typical Performance Characteristics Figure 19. Transient Thermal Impedance of IGBT 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 single pulse 1E-3 1E-5 FGI40N60SF Rev Duty Factor t1/t2 Peak T 1E-4 1E-3 0.01 Rectangular Pulse Duration [sec Pdm x Zthjc + 0.1 1 www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions 9.90 1.27 ±0.10 2.54 TYP 10.00 FGI40N60SF Rev -PAK ±0.20 1.47 ±0.10 0.80 ±0.10 2.54 TYP ±0.20 7 4.50 ±0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 ±0.20 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

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