FGA90N30D Fairchild Semiconductor, FGA90N30D Datasheet

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FGA90N30D

Manufacturer Part Number
FGA90N30D
Description
Fga90n30d 300v Pdp Igbt
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number:
FGA90N30D
Manufacturer:
FAIRCHIL
Quantity:
12 500
©2006 Fairchild Semiconductor Corporation
FGA90N30D Rev. A
FGA90N30D
300V PDP IGBT
Features
• High Current Capability
• Low saturation voltage: V
• High Input Impedance
Absolute Maximum Ratings
Notes:
(1) Repetitive test , pulse width = 100usec , Duty = 0.5
* Ic_pulse limited by max Tj
Thermal Characteristics
V
V
I
I
I
I
P
T
T
T
R
R
R
C
CM
F
FM
stg
J
L
CES
GES
D
Symbol
θJC
θJC
θJA
Symbol
(IGBT)
(DIODE)
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction-to-Case for IGBT
Thermal Resistance, Junction-to-Case for Diode
Thermal Resistance, Junction-to-Ambient
G C E
CE(sat),
Typ = 1.1V@ I
Description
Parameter
(Note 1)
TO-3P
T
C
= 25°C unless otherwise noted
C
= 20A
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
= 25°C
= 25°C
= 100°C
= 25°C
= 100°C
1
Description
Employing Unified IGBT Technology, FGA90N30D provides low
conduction and switching loss. FGA90N30D offers the optimum
solution for PDP applications where low condution loss is
essential.
Typ.
--
--
--
FGA90N30D
G
G
-55 to +150
-55 to +150
± 30
300
220
219
300
90
10
40
87
Max.
0.57
1.56
40
C
C
E
E
September 2006
www.fairchildsemi.com
Units
Units
°C/W
°C/W
°C/W
°C
°C
°C
W
W
V
V
A
A
A
A

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FGA90N30D Summary of contents

Page 1

... R Thermal Resistance, Junction-to-Ambient θJA ©2006 Fairchild Semiconductor Corporation FGA90N30D Rev. A Description Employing Unified IGBT Technology, FGA90N30D provides low conduction and switching loss. FGA90N30D offers the optimum = 20A C solution for PDP applications where low condution loss is essential. TO- 25°C unless otherwise noted ...

Page 2

... E Turn-On Switching Loss on E Turn-Off Switching Loss off E Total Switching Loss ts Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector Charge gc FGA90N30D Rev. A Package Reel Size TO- 25°C unless otherwise noted C Test Conditions 250μ 0V 250μ ...

Page 3

... Electrical Characteristics of DIODE Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr I Diode Peak Reverse Recovery Cur- rr rent Q Diode Reverse Recovery Charge rr FGA90N30D Rev 25°C unless otherwise noted C Test Conditions I = 10A T = 25° 125° 10A T = 25° ...

Page 4

... FGA90N30D Rev. A Figure 2. Typical Output Characteristics ...

Page 5

... FGA90N30D Rev. A (Continued) Figure 8. Capacitance Charaacteristics ...

Page 6

... Safe O perating Area 20V , T = 100 100 ollector-E m itter V oltage, V FGA90N30D Rev. A (Continued) Figure 14.Turn-Off Characteristics vs Figure 16.Switching Loss vs. Collector Current ...

Page 7

... Figure 19. Forward Characteristics 100 125 0.1 0.0 0.5 1.0 Forw ard Voltage , V Figure 21. Typical Reverse Recovery Time 100 di/dt [A/ FGA90N30D Rev. A (Continued) 1E-4 1E-3 0.01 Rectangular Pulse Duration [sec 125 100 1.5 2.0 2.5 [ 10A ...

Page 8

... Mechanical Dimensions ø3.20 ±0.10 2.00 ±0.20 3.00 ±0.20 1.00 ±0.20 5.45TYP [5.45 ] ±0.30 FGA90N30D Rev. A TO-3P 15.60 ±0.20 13.60 ±0.20 9.60 ±0.20 5.45TYP [5.45 ] ±0.30 8 4.80 ±0.20 +0.15 1.50 –0.05 1.40 ±0.20 +0.15 0.60 –0.05 www.fairchildsemi.com ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ GlobalOptoisolator™ Bottomless™ GTO™ Build it Now™ HiSeC™ ...

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