FGA40N60UFD Fairchild Semiconductor, FGA40N60UFD Datasheet

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... 100 100 100 C C Parameter IGBT = 2 20A CE(sat 50ns (typ FGA40N60UFD Units 600 160 160 A 160 -55 to +150 C -55 to +150 C 300 C Typ. Max. Units -- 0.77 C/W -- 1.7 C C/W FGA40N60UFD Rev. A ...

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... V -- 2 1075 -- pF -- 170 -- 130 100 ns -- 470 -- uJ -- 130 -- uJ -- 600 1000 110 200 250 ns -- 500 -- uJ -- 310 -- uJ -- 810 1200 150 Typ. Max. Units -- 1 4 180 nC -- 220 -- FGA40N60UFD Rev. A ...

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... GE Fig 6. Saturation Voltage vs =15V 1 Collector-Emitter Voltage, V (V) CE Vcc = 300V Load Current : peak of square wave 1 10 100 Frequency [kHz] Common Emitter = 125 ℃ 40A 20A Ic=10A Gate - Emitter Voltage FGA40N60UFD Rev 1000 20 ...

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... Ton Tr 10 100 ( Ω ) Gate Resistance =± 15V GE Eon Eoff 10 100 ( Ω ) Gate Resistance Common Emitter = ± 15V V = 300V 25℃ 125℃ Collector Current, I [A] C Collector Current FGA40N60UFD Rev. A 200 200 40 ...

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... Fig 17. Transient Thermal Impedance of IGBT Common Emitter =15 Ω (Tc=25 ℃ ) 300V 200V Vcc=100V Gate Charge, Qg (nC) Safe Operating Area o V =20V, T =100 100 Collector-Emitter Voltage, V [V] CE Pdm t1 t2 Duty factor Peak Tj = Pdm Zthjc + FGA40N60UFD Rev. A 120 1000 ...

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... Fairchild Semiconductor Corporation 100 V = 200V 15A 25℃ 100℃ 100 [V] F Fig 19. Reverse Recovery Current 120 100 1000 100 Fig 21. Reverse Recovery Time 1000 di/dt [A/us 200V 15A 25℃ 100℃ C 1000 di/dt [A/us] FGA40N60UFD Rev. A ...

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... Package Dimensions 15.60 13.60 ø3.20 0.10 9.60 2.00 0.20 3.00 0.20 1.00 0.20 5.45TYP [5.45 ] 0.30 ©2003 Fairchild Semiconductor Corporation TO-3P 0.20 0.20 0.20 5.45TYP [5.45 ] 0.30 4.80 0.20 +0.15 1.50 –0.05 1.40 0.20 +0.15 0.60 –0.05 FGA40N60UFD Rev. A ...

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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...