FFA10U40DN Fairchild Semiconductor, FFA10U40DN Datasheet
FFA10U40DN
Manufacturer Part Number
FFA10U40DN
Description
Ultra Fast Recovery Power Rectifier
Manufacturer
Fairchild Semiconductor
Datasheet
1.FFA10U40DN.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FFA10U40DN
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2000 Fairchild Semiconductor International
ULTRA FAST RECOVERY POWER RECTIFIER
Absolute Maximum Ratings
Thermal Characteristics
Electrical Characteristics
* Pulse Test: Pulse Width=300 s, Duty Cycle 2%
Features
• Ultrafast with soft recovery
• Low forward voltage
Applications
• Power switching circuits
• Output rectifiers
• Freewheeling diodes
• Switching mode power supply
V
I
I
T
R
V
I
t
I
Q
W
F(AV)
FSM
RM
rr
rr
J,
RRM
FM
rr
AVL
JC
Symbol
Symbol
Symbol
T
STG
*
*
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
Operating Junction and Storage Temperature
Maximum Thermal Resistance, Junction to Case
Maximum Instantaneous Forward Voltage
Maximum Instantaneous Reverse Current
Maximum Reverse Recovery Time
Maximum Reverse Recovery Current
Maximum Reverse Recovery Charge
(I
Avalanche Energy
F
=10A, di/dt = 200A/ s)
60Hz Single Half-Sine Wave
@ rated V
I
I
F
F
Parameter
(per diode) T
= 10A
= 10A
Parameter
Parameter
(per diode) T
R
FFA10U40DN
1
C
2
=25 C unless otherwise noted
3
C
=25 C unless otherwise noted
T
T
T
T
@ T
C
C
C
C
= 25 C
= 100 C
= 25 C
= 100 C
C
= 100 C
TO-3P
Min.
1.0
-
-
-
-
-
-
-
1. Anode 2.Cathode 3. Anode
- 65 to +150
Typ.
-
-
-
-
-
-
-
-
Value
Value
400
100
4.0
10
Max.
300
113
1.4
1.3
4.5
30
50
-
Rev. F, September 2000
Units
Units
Units
C/W
mJ
nC
ns
V
A
A
V
A
C
A
Related parts for FFA10U40DN
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
FFA10U40DN Summary of contents
Page 1
... Maximum Reverse Recovery Current rr Q Maximum Reverse Recovery Charge rr (I =10A, di/dt = 200A Avalanche Energy AVL * Pulse Test: Pulse Width=300 s, Duty Cycle 2% ©2000 Fairchild Semiconductor International FFA10U40DN TO- (per diode) T =25 C unless otherwise noted C Parameter @ T = 100 C C 60Hz Single Half-Sine Wave ...
Page 2
... Reverse Voltage , V Figure 3. Typical Junction Capacitance 100 di/dt [A/ s] Figure 5. Typical Reverse Recovery Current vs. di/dt ©2000 Fairchild Semiconductor International 1000 100 0.1 0.01 0.001 1.5 2.0 [ Typical Capacitance 450 ...
Page 3
... Package Dimensions ø3.20 0.10 2.00 0.20 3.00 0.20 1.00 0.20 5.45TYP [5.45 ] 0.30 ©2000 Fairchild Semiconductor International TO-3P 15.60 0.20 13.60 0.20 9.60 0.20 5.45TYP [5.45 ] 0.30 4.80 0.20 +0.15 1.50 –0.05 1.40 0.20 +0.15 0.60 –0.05 Dimensions in Millimeters Rev. F, September 2000 ...
Page 4
TRADEMARKS DISCLAIMER LIFE SUPPORT POLICY PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition ...