FFAF40UP20DN Fairchild Semiconductor, FFAF40UP20DN Datasheet
FFAF40UP20DN
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FFAF40UP20DN Summary of contents
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... STG Thermal Characteristics Symbol R Maximum Thermal Resistance, Junction to Case 6JC Package Marking and Ordering Information Device Marking Device F40UP20DN FFAF40UP20DNTU ©2005 Fairchild Semiconductor Corporation FFAF40UP20DN Rev 20A TO-3PF 1. Anode 2. Cathode 3. Anode (per diode 25°C unless otherwise noted C Parameter @ T = 110GC ...
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... =20A, di/dt = 200A/2s Avalanche Energy (L = 40mH) AVL * Pulse Test: Pulse Width=3002s, Duty Cycle2% Test Circuit and Waveforms FFAF40UP20DN Rev. A (per diode 25°C unless otherwise noted C Parameter Min 100 ...
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... REVERSE VOLTAGE, V Figure 5. Typical Reverse Recovery Current 20A 125 100 200 di/dt [A/ FFAF40UP20DN Rev. A Figure 2. Typical Reverse Current 10 1 0.1 0.01 1E-3 1.2 1.4 1.6 0 [V] F Figure 4. Typical Reverse Recovery Time 1MHz 100 ...
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Package Demensions 2.00 H0.20 2.00 H0.20 4.00 H0.20 +0.20 0.75 –0.10 5.45TYP [5.45 ] H0.30 © TO-3PF 15.50 ø3.60 H0.20 H0.20 0.85 H0.03 2.00 H0.20 5.45TYP [5.45 ] H0.30 5.50 H0.20 3.00 H0.20 (1.50) 2.00 H0.20 3.30 H0.20 +0.20 0.90 ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FFAF40UP20DN Rev. A ISOPLANAR™ PowerSaver™ LittleFET™ PowerTrench MICROCOUPLER™ QFET MicroFET™ QS™ MicroPak™ ...