FFAF10U20 Fairchild Semiconductor, FFAF10U20 Datasheet
FFAF10U20
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FFAF10U20 Summary of contents
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... I Maximum Reverse Recovery Current rr Q Maximum Reverse Recovery Charge rr (I =10A, di/dt = 200A Avalanche Energy AVL * Pulse Test: Pulse Width=300 s, Duty Cycle 2% ©2001 Fairchild Semiconductor Corporation FFAF10U20DN TO-220F TO-3PF (per diode) T =25 C unless otherwise noted C Parameter @ T = 100 C ...
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... Forward Current 400 300 200 100 0.1 1 Reverse Voltage , V Figure 3. Typical Junction Capacitance 100 di/dt [A/ s] Figure 5. Typical Reverse Recovery Current vs. di/dt ©2001 Fairchild Semiconductor Corporation 1000 100 0.1 0.01 0.001 0 1.5 2.0 [V] F Figure 2. Typical Reverse Current 40 Typical Capacitance 286 pF 35 ...
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... Package Dimensions 2.00 2.00 4.00 +0.20 0.75 –0.10 5.45TYP [5.45 0.30 ©2001 Fairchild Semiconductor Corporation TO-3PF 15.50 ø3.60 0.20 0.20 0.20 2.00 0.20 0.20 0.20 5.45TYP ] [5.45 ] 0.30 5.50 0.20 3.00 0.20 (1.50) 0.85 0.03 2.00 0.20 3.30 0.20 +0.20 0.90 –0.10 Dimensions in Millimeters Rev. A, December 2001 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...