FFA60U60DN Fairchild Semiconductor, FFA60U60DN Datasheet

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FFA60U60DN

Manufacturer Part Number
FFA60U60DN
Description
Ultra Fast Recovery Power Rectifier
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
FFA60U60DN
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2000 Fairchild Semiconductor International
ULTRA FAST RECOVERY POWER RECTIFIER
Absolute Maximum Ratings
Thermal Characteristics
Electrical Characteristics
* Pulse Test: Pulse Width=300 s, Duty Cycle 2%
Features
• High voltage and high reliability
• High speed switching
• Low forward voltage
Applications
• General purpose
• Switching mode power supply
• Free-wheeling diode for motor application
• Power switching circuits
V
I
I
T
R
V
I
t
I
Q
W
F(AV)
FSM
RM
rr
rr
J,
RRM
FM
rr
AVL
JC
Symbol
Symbol
Symbol
T
STG
*
*
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
Operating Junction and Storage Temperature
Maximum Thermal Resistance, Junction to Case
Maximum Instantaneous Forward Voltage
Maximum Instantaneous Reverse Current
Maximum Reverse Recovery Time
Maximum Reverse Recovery Current
Maximum Reverse Recovery Charge
(I
Avalanche Energy
F
=60A, di/dt = 200A/ s)
60Hz Single Half-Sine Wave
I
I
@ rated V
F
F
= 60A
= 60A
Parameter
(per diode) T
Parameter
Parameter
(per diode) T
R
FFA60U60DN
1
C
2
=25 C unless otherwise noted
3
C
=25 C unless otherwise noted
T
T
T
T
@ T
C
C
C
C
= 25 C
= 100 C
= 25 C
= 100 C
C
= 100 C
TO-3P
Min.
1.0
-
-
-
-
-
-
-
1. Anode 2.Cathode 3. Anode
- 65 to +150
Typ.
-
-
-
-
-
-
-
-
Value
Value
0.45
600
360
60
Max.
250
405
2.2
2.0
25
90
9
-
Rev. F, September 2000
Units
Units
Units
C/W
mJ
nC
ns
V
A
A
V
A
C
A

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FFA60U60DN Summary of contents

Page 1

... Maximum Reverse Recovery Current rr Q Maximum Reverse Recovery Charge rr (I =60A, di/dt = 200A Avalanche Energy AVL * Pulse Test: Pulse Width=300 s, Duty Cycle 2% ©2000 Fairchild Semiconductor International FFA60U60DN TO- (per diode) T =25 C unless otherwise noted C Parameter @ T = 100 C C 60Hz Single Half-Sine Wave ...

Page 2

... Reverse Voltage , V Figure 3. Typical Junction Capacitance 100 di/dt [A/ s] Figure 5. Typical Reverse Recovery Current vs. di/dt ©2000 Fairchild Semiconductor International 1000 100 0.1 0.01 2.0 2.5 3.0 [ Typical Capacitance 850 100 10 100 ...

Page 3

... Package Dimensions ø3.20 0.10 2.00 0.20 3.00 0.20 1.00 0.20 5.45TYP [5.45 ] 0.30 ©2000 Fairchild Semiconductor International TO-3P 15.60 0.20 13.60 0.20 9.60 0.20 5.45TYP [5.45 ] 0.30 4.80 0.20 +0.15 1.50 –0.05 1.40 0.20 +0.15 0.60 –0.05 Dimensions in Millimeters Rev. F, September 2000 ...

Page 4

TRADEMARKS DISCLAIMER LIFE SUPPORT POLICY PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition ...

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