FFAF10U170S Fairchild Semiconductor, FFAF10U170S Datasheet
FFAF10U170S
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FFAF10U170S Summary of contents
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... F t Maximum Forward Recovery Time fr (I =6.5A, di/dt = 50A Maximum Forward Recovery Voltage FRM * Pulse Test: Pulse Width=300 s, Duty Cycle 2% ©2001 Fairchild Semiconductor Corporation FFAF10U170S TO-3PF =25 C unless otherwise noted C Parameter @ T = 125 C C 60Hz Single Half-Sine Wave Parameter T =25 C unless otherwise noted ...
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... Figure 3. Typical Junction Capacitance 1500 1200 di/dt = 100A/ s 900 600 di/dt = 50A/ s 300 Forward Current , I Figure 5. Typical Stored Charge vs. Forward Current ©2001 Fairchild Semiconductor Corporation 10000 1000 100 10 1 0.1 0.001 [V] F 300 Typical Capacitance 174 pF 200 100 ...
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... Package Dimensions ©2001 Fairchild Semiconductor Corporation TO-3PF-2L Dimensions in Millimeters Rev. A, June 2001 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...