A43L0616AV-7F AMIC Technology, Corp., A43L0616AV-7F Datasheet - Page 13

• Manufacturer Part Number: A43L0616AV-7F
• Description: 512K x 16 Bit x 2 Banks Synchronous DRAM
• Manufacturer: AMIC Technology, Corp.

Device Operations
Clock (CLK)
The clock input is used as the reference for all SDRAM
operations. All operations are synchronized to the positive
going edge of the clock. The clock transitions must be
monotonic between VIL and VIH. During operation with
CKE high all inputs are assumed to be in valid state (low or
high) for the duration of set up and hold time around
positive edge of the clock for proper functionality and ICC
specifications.
Clock Enable (CLK)
The clock enable (CKE) gates the clock onto SDRAM. If
CKE goes low synchronously with clock (set-up and hold
time same as other inputs), the internal clock is suspended
form the next clock cycle and the state of output and burst
address is frozen as long as the CKE remains low. All other
inputs are ignored from the next clock cycle after CKE goes
low. When both banks are in the idle state and CKE goes
low synchronously with clock, the SDRAM enters the power
down mode form the next clock cycle. The SDRAM remains
in the power down mode ignoring the other inputs as long
as CKE remains low. The power down exit is synchronous
as the internal clock is suspended. When CKE goes high at
least “t
clock, then the SDRAM becomes active from the same
clock edge accepting all the input commands.
Bank Select (BA)
This SDRAM is organized as two independent banks of
524,288 words X 16 bits memory arrays. The BA inputs is
latched at the time of assertion of RAS and
the bank to be used for the operation. When BA is asserted
low, bank A is selected. When BA is asserted high, bank B
is selected. The bank select BA is latched at bank activate,
read, write mode register set and precharge operations.
Address Input (A0 ~ A10/AP)
The 19 address bits required to decode the 524,288 word
locations are multiplexed into 11 address input pins
(A0~A10/AP). The 11 bit row address is latched along with
column address is latched along with
during read or write command.
NOP and Device Deselect
When RAS ,
performs no operation (NOP). NOP does not initiate any
new operation, but is needed to complete operations which
require more than single clock like bank activate, burst
read, auto refresh, etc. The device deselect is also a NOP
(May, 2003, Version 2.1)
RAS and BA during bank activate command. The 8 bit
SS
+ 1
CLOCK
CAS
” before the high going edge of the
and
WE
are high, the SDRAM
CAS
CAS
,
WE
to select
and BA
12
and is entered by asserting CS high. CS high disables
the command decoder so that RAS ,
all the address inputs are ignored.
Power-Up
The following sequence is recommended for POWER UP
1. Power must be applied to either CKE and DQM inputs to
2. After VDD reaches the desired voltage, a minimum
3. Both banks must be precharged now.
4. Perform a minimum of 2 Auto refresh cycles to stabilize
5. Perform a MODE REGISTER SET cycle to program the
Mode Register Set (MRS)
The mode register stores the data for controlling the various
operation modes of SDRAM. It programs the CAS latency,
addressing mode, burst length, test mode and various
vendor specific options to make SDRAM useful for variety
of different applications. The default value of the mode
register is not defined, therefore the mode register must be
written after power up to operate the SDRAM. The mode
register is written by asserting low on CS
CKE already high prior to writing the mode register). The
state of address pins A0~A10/AP and BA in the same cycle
as CS , RAS ,
the mode register. One clock cycle is required to complete
the write in the mode register. The mode register contents
can be changed using the same command and clock cycle
requirements during operation as long as both banks are in
the idle state. The mode register is divided into various
fields depending on functionality. The burst length field
uses A0~A2, burst type uses A3, addressing mode uses
A4~A6, A7~A8, A10/AP and BA are used for vendor
specific options or test mode. And the write burst length is
programmed using A9. A7~A8, A10/AP and BA must be set
to low for normal SDRAM operation.
Refer to table for specific codes for various burst length,
addressing modes and CAS latencies.
CAS
pull them high and other pins are NOP condition at the
inputs before or along with VDD (and VDDQ) supply.
The clock signal must also be asserted at the same time.
pause of 200 microseconds is required with inputs in
NOP condition.
the internal circuitry.
CAS latency, burst length and burst type as the default
value of mode register is undefined.
At the end of one clock cycle from the mode register set
cycle, the device is ready for operation.
When the above sequence is used for Power-up, all the
out-puts will be in high impedance state. The high
impedance of outputs is not guaranteed in any other
power-up sequence.
cf.) Sequence of 4 & 5 may be changed.
,
WE
(The SDRAM should be in active mode with
CAS
,
WE
AMIC Technology, Corp.
going low is the data written in
CAS
A43L0616A
and
WE
, RAS ,
, and