RLD03N06CLE Fairchild Semiconductor, RLD03N06CLE Datasheet

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RLD03N06CLE

Manufacturer Part Number
RLD03N06CLE
Description
Manufacturer
Fairchild Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RLD03N06CLE
Manufacturer:
Intersil/FSC
Quantity:
12 500
July 1996
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Features
• 0.30A, 60V
• r
• Built in Current Limit I
• Built in Voltage Clamp
• Temperature Compensating PSPICE Model
• 2kV ESD Protected
• Controlled Switching Limits EMI and RFI
Description
The RLD03N06CLE, RLD03N06CLESM and RLP03N06CLE
are intelligent monolithic power circuits which incorporate a lat-
eral bipolar transistor, resistors, zener diodes and a power MOS
transistor. The current limiting of these devices allow it to be used
safely in circuits where a shorted load condition may be encoun-
tered. The drain-source voltage clamping offers precision control
of the circuit voltage when switching inductive loads. The “Logic
Level” gate allows this device to be fully biased on with only 5.0V
from gate to source, thereby facilitating true on-off power control
directly from logic level (5V) integrated circuits.
The RLD03N06CLE, RLD03N06CLESM and RLP03N06CLE
incorporate ESD protection and are designed to withstand 2kV
(Human Body Model) of ESD.
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, i.e.
RLD03N06CLESM9A.
Formerly developmental type TA49026.
Absolute Maximum Ratings
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate Source Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Power Dissipation
Electrostatic Discharge Rating MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . . . . . . . . ESD
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
RLD03N06CLE
RLD03N06CLESM
RLP03N06CLE
Reverse Voltage Gate Bias Not Allowed
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
T
Derate above +25
PART NUMBER
DS(ON)
C
= +25
©
Harris Corporation 1996
S E M I C O N D U C T O R
o
= 6.0
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
PACKAGING AVAILABILITY
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
TO-251AA
TO-252AA
TO-220AB
PACKAGE
Logic Level N-Channel Enhancement-Mode Power MOSFETs
LIMIT
0.140 to 0.210A at 150
0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped
T
C
= +25
03N06C
03N06C
03N06CLE
o
RLD03N06CLESM, RLP03N06CLE
C
BRAND
o
C
1
Packages
Symbol
(FLANGE)
DRAIN
(FLANGE)
DRAIN
STG
DGR
DSS
, T
G
SOURCE
GS
D
D
GATE
T
J
JEDEC TO-220AB
JEDEC TO-251AA
JEDEC TO-252AA
RLD03N06CLE,
RLD03N06CLESM,
RLD03N06CLE,
RLP03N06CLE
Self Limited
-55 to +175
D
S
+5.5
0.2
60
60
30
2
SOURCE
DRAIN
GATE
File Number
(FLANGE)
SOURCE
DRAIN
DRAIN
GATE
UNITS
W/
KV
o
W
V
V
V
C
3948.3
o
C

Related parts for RLD03N06CLE

RLD03N06CLE Summary of contents

Page 1

... ESD Protected • Controlled Switching Limits EMI and RFI Description The RLD03N06CLE, RLD03N06CLESM and RLP03N06CLE are intelligent monolithic power circuits which incorporate a lat- eral bipolar transistor, resistors, zener diodes and a power MOS transistor. The current limiting of these devices allow used safely in circuits where a shorted load condition may be encoun- tered ...

Page 2

... Specifications RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE Electrical Specifications T = +25 C PARAMETERS Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current On Resistance Limiting Current Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time ...

Page 3

... RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE Typical Performance Curves 1 OPERATION IN THIS AREA IS LIMITED BY JUNCTION TEMPERATURE OPERATION IN THIS AREA MAY BE LIMITED BY r DS(ON) 0 DRAIN-TO-SOURCE VOLTAGE (V) DS FIGURE 1. SAFE OPERATING AREA CURVE 2.0 1.5 1.0 0.5 0 -80 - JUNCTION TEMPERATURE ( J FIGURE 3. TYPICAL NORMALIZED DRAIN CURRENT vs JUNCTION TEMPERATURE PULSE DURATION = 250 s, T ...

Page 4

... RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE Typical Performance Curves PULSE DURATION = 250 s, 2.5 2.0 1.5 1.0 0.5 0.0 -80 - JUNCTION TEMPERATURE ( J FIGURE 7. NORMALIZED r vs JUNCTION TEMPERATURE DS(ON) 2.0 1.5 1.0 0.5 0.0 -80 - JUNCTION TEMPERATURE ( J FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE vs TEMPERATURE V = 0V, FREQUENCY (f) = 1MHz GS 300 200 100 DRAIN-TO-SOURCE VOLTAGE (V) DS FIGURE 11 ...

Page 5

... The curves shown as Figures 22 through 25 (RLP03N06CLE) and Fig- ure 26 through 29 (RLD03N06CLE and RLD03N06CLESM) give an accurate indication of how long the specified voltage can be applied to the device in the current limiting mode (EQ. 1) without exceeding the maximum specifi ...

Page 6

... RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE Performance Curves HEAT SINK THERMAL RESISTANCE = HSTR HSTR = 5 C HSTR = 10 C HSTR = 25 C HSTR = 80 C 100 T , AMBIENT TEMPERATURE ( A FIGURE 15. DC OPERATION IN CURRENT LIMITING DUTY CYCLE = DC MAX PULSE WIDTH = 100ms 20 50 175 ...

Page 7

... RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE Performance Curves (Continued) DUTY CYCLE = DC MAX PULSE WIDTH = 100ms 10 175 0.210A LIM 5 100 T , AMBIENT TEMPERATURE ( A FIGURE 21. MAXIMUM V vs AMBIENT TEMPERATURE IN DS CURRENT LIMITING. (HSTR = ...

Page 8

... RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE Performance Curves (Continued DRAIN TO SOURCE VOLTAGE ( FIGURE 27. TIME TO 175 C IN CURRENT LIMITING (HEATSINK THERMAL RESISTANCE = 10 (HEATSINK THERMAL CAPACITANCE = 1.0J FIGURE 29. TIME TO 175 (HEATSINK THERMAL CAPACITANCE = 4J STARTING ...

Page 9

... RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE Temperature Compensated PSPICE Model for the RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE SUBCKT RLD03N06CLE rev 4/18/ 0.547e 0.547e-9 CIN 6 8 0.301e-9 DBODY 7 5 DBDMOD DBREAK 5 11 DBKMOD DESD1 91 9 DESD1MOD DESD2 91 7 DESD2MOD DPLCAP 10 5 DPLCAPMOD EBREAK 66.5 ...

Page 10

... RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE TO-220AB 3 LEAD JEDEC TO-220AB PLASTIC PACKAGE E Ø LEAD NO GATE LEAD NO DRAIN LEAD NO SOURCE TERM DRAIN A SYMBOL TERM ...

Page 11

... RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE TO-251AA 3 LEAD JEDEC TO-251AA PLASTIC PACKAGE LEAD NO GATE LEAD NO DRAIN LEAD NO SOURCE TERM DRAIN A SYMBOL MIN 0.086 TERM 0.018 SEATING 1 PLANE b 0.028 b 0.033 1 b 0.205 ...

Page 12

... RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE TO-252AA SURFACE MOUNT JEDEC TO-252AA PLASTIC PACKAGE TERM 0.070 (1.8) BACK VIEW 0.063 (1.6) 0.090 (2.3) MINIMUM PAD SIZE RECOMMENDED FOR SURFACE-MOUNTED APPLICATIONS LEAD NO GATE LEAD NO SOURCE TERM DRAIN ...

Page 13

... RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE TO-252AA 16mm TAPE AND REEL 330mm Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use ...

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