FQB5N90 Fairchild Semiconductor, FQB5N90 Datasheet

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FQB5N90

Manufacturer Part Number
FQB5N90
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2008 Fairchild Semiconductor International
FQB5N90 / FQI5N90
900V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
FQB Series
D
2
-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
Parameter
Parameter
= 25°C) *
= 25°C)
G
D
T
S
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 5.4A, 900V, R
• RoHS Compliant
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 13 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQI Series
I
2
-PAK
FQB5N90 / FQI5N90
DS(on)
Typ
--
--
--
-55 to +150
= 2.3
3.42
21.6
15.8
3.13
1.27
660
158
300
900
5.4
5.4
4.0
30
G
@ V
!
!
Max
0.79
62.5
40
GS
! "
! "
= 10 V
October 2008
!
!
!
!
S
D
"
"
"
"
"
"
QFET
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
Rev. A1, Oct 2008
®

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FQB5N90 Summary of contents

Page 1

... A = 25°C) C Parameter October 2008 QFET = 2 DS(on " " ! " ! " " " " " FQB5N90 / FQI5N90 Units 900 V 5.4 A 3. 660 mJ 5.4 A 15.8 mJ 4.0 V/ns 3.13 W 158 W 1.27 W/°C -55 to +150 °C 300 °C Typ Max ...

Page 2

... ≤ 5.4A, di/dt ≤ 200A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2008 Fairchild Semiconductor International T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25°C ...

Page 3

... C 1200 oss 1000 800 C 600 rss 400 200 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2008 Fairchild Semiconductor International ※ Notes : 1. 250μ s Pulse Test 25℃ Figure 2. Transfer Characteristics ※ Note : T = 25℃ ...

Page 4

... V , Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2008 Fairchild Semiconductor International (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0.5 = 250 μ 0.0 100 150 200 -100 o C] Figure 8 ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2008 Fairchild Semiconductor International Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2008 Fairchild Semiconductor International + + DUT DUT Driver Driver Same Type Same Type ...

Page 7

... Mechanical Dimensions ©2008 Fairchild Semiconductor International PAK Dimensions in Millimeters Rev. A1, Oct 2008 ...

Page 8

... Mechanical Dimensions ©2008 Fairchild Semiconductor International PAK Dimensions in Millimeters Rev. A1, Oct 2008 ...

Page 9

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FQB5N90 / FQI5N90 Rev. A1 ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...

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