FQT13N06 Fairchild Semiconductor, FQT13N06 Datasheet - Page 3

• Manufacturer Part Number: FQT13N06
• Manufacturer: Fairchild Semiconductor

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
500
400
300
200
100
600
500
400
300
200
100
10
10
10
0
0
-1
10
1
0
10
0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs.
Top :
Bottom : 4.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
V
GS
10
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
C
I
C
C
10
D
oss
iss
rss
, Drain Current [A]
0
10
0
V
V
20
GS
GS
= 10V
= 20V
C
C
C
iss
oss
rss
※ Notes :
= C
= C
= C
1. 250μ s Pulse Test
2. T
10
30
※ Note : T
gs
gd
ds
1
C
+ C
+ C
= 25℃
gd
gd
※ Notes :
(C
1. V
2. f = 1 MHz
10
ds
J
= 25℃
= shorted)
1
GS
= 0 V
40
10
10
10
10
10
12
10
8
6
4
2
0
-1
1
0
1
0
0.2
0
2
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics
25℃
150℃
0.4
1
Variation vs. Source Current
150℃
4
0.6
V
V
2
Q
and Temperature
GS
SD
G
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
, Total Gate Charge [nC]
-55℃
25℃
0.8
V
3
DS
V
DS
= 48V
= 30V
6
1.0
4
※ Notes :
1.2
※ Notes :
5
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
GS
= 25V
= 0V
1.4
D
6
= 13 A
Rev. A2, January 2002
1.6
10
7