FQD1N80 Fairchild Semiconductor, FQD1N80 Datasheet

no-image

FQD1N80

Manufacturer Part Number
FQD1N80
Description
Manufacturer
Fairchild Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQD1N80
Manufacturer:
FAIRCHILD
Quantity:
30 000
Part Number:
FQD1N80
Manufacturer:
ST
0
Part Number:
FQD1N80
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FQD1N80TM
Manufacturer:
FSC
Quantity:
5 000
Part Number:
FQD1N80TM
Manufacturer:
FAIRCHILD
Quantity:
6 000
Part Number:
FQD1N80TM
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FQD1N80TM
Quantity:
10 000
Company:
Part Number:
FQD1N80TM
Quantity:
20 000
©2009 Fairchild Semiconductor Corporation
FQD1N80 / FQU1N80
800V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
S
FQD Series
D-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
Parameter
Parameter
= 25°C) *
= 25°C)
G
T
D
C
C
C
= 25°C unless otherwise noted
S
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 1.0A, 800V, R
• Low gate charge ( typical 5.5nC)
• Low Crss ( typical 2.7pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant
FQU Series
I-PAK
FQD1N80 / FQU1N80
DS(on)
Typ
--
--
--
-55 to +150
= 20
0.63
0.36
300
800
1.0
4.0
1.0
4.5
4.0
2.5
90
45
30
@V
G
!
!
GS
Max
2.78
110
50
January 2009
= 10 V
! "
! "
QFET
!
!
!
!
S
D
"
"
"
"
"
"
Units
W/°C
Units
°C/W
°C/W
°C/W
Rev. A3. October 2009
V/ns
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
®

Related parts for FQD1N80

FQD1N80 Summary of contents

Page 1

... A = 25°C) C Parameter January 2009 ® QFET = DS(on " " ! " ! " " " " " FQD1N80 / FQU1N80 Units 800 V 1.0 A 0. 1.0 A 4.5 mJ 4.0 V/ns 2 0.36 W/°C -55 to +150 °C 300 °C Typ Max ...

Page 2

... ≤ 1.0A, di/dt ≤ 200A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2009 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25°C ...

Page 3

... C iss 150 C oss 100 C 50 rss Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2009 Fairchild Semiconductor Corporation 0 10 ※ Notes : 1. 250μ s Pulse Test 25℃ Figure 2. Transfer Characteristics = 10V 0 10 ※ Note : T = 25℃ ...

Page 4

... V , Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2009 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0 250 μ 0.0 100 150 200 -100 o C] Figure 8 ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2009 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2009 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type ...

Page 7

... Mechanical Dimensions TO-252 (DPAK) (FS PKG Code 36) ©2009 Fairchild Semiconductor Corporation 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: millimeters Part Weight per unit (gram): 0.33 Rev. A3. January 2009 ...

Page 8

... Mechanical Dimensions ©2009 Fairchild Semiconductor Corporation I - PAK Dimensions in Millimeters Rev. A3. January 2009 ...

Page 9

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

Related keywords