FQT7N10L Fairchild Semiconductor, FQT7N10L Datasheet - Page 3

• Manufacturer Part Number: FQT7N10L
• Manufacturer: Fairchild Semiconductor

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
600
500
400
300
200
100
10
10
1.5
1.2
0.9
0.6
0.3
0.0
-1
0
0
10
10
0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs.
Top :
Bottom : 3.0 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
V
GS
5
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
10
D
, Drain Current [A]
V
0
10
GS
0
V
GS
= 10V
= 5V
10
C
C
C
iss
oss
rss
C
C
C
iss
oss
rss
※ Notes :
= C
= C
= C
1. 250μ s Pulse Test
2. T
10
15
※ Note : T
gs
gd
1
ds
C
+ C
= 25℃
+ C
10
※ Notes :
gd
gd
1
1. V
2. f = 1 MHz
(C
J
ds
GS
= 25℃
= shorted)
= 0 V
20
10
10
10
10
12
10
-1
8
6
4
2
0
-1
0
0
0.2
0
0
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
25℃
Figure 2. Transfer Characteristics
150℃
1
Variation vs. Source Current
0.4
150℃
2
2
V
V
Q
and Temperature
GS
SD
G
0.6
, Source-Drain Voltage [V]
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
V
-55℃
DS
3
= 80V
4
V
25℃
DS
= 50V
0.8
4
6
5
1.0
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
6
DS
GS
= 30V
= 0V
8
1.2
D
= 7.3 A
7
1.4
Rev. A, May 2001
10
8