FQT4N20L Fairchild Semiconductor, FQT4N20L Datasheet - Page 3

• Manufacturer Part Number: FQT4N20L
• Manufacturer: Fairchild Semiconductor

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
10
450
400
350
300
250
200
150
100
10
50
-1
8
6
4
2
0
0
0
10
10
0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs.
Top :
Bottom :
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
10 V
3.0 V
V
GS
2
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
10
10
, Drain Current [A]
0
0
C
C
C
iss
oss
rss
4
V
GS
= 10V
V
GS
= 5 V
C
C
C
※ Notes :
iss
oss
rss
1. 250 μ s Pulse Test
2. T
10
10
= C
= C
= C
6
1
1
C
gs
ds
gd
= 25 ℃
+ C
※ Notes :
+ C
1. V
2. f = 1 MHz
gd
gd
(C
GS
ds
= 0 V
= shorted)
8
10
10
10
10
12
10
-1
-1
8
6
4
2
0
0
0
0.2
0
0
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
25℃
Figure 2. Transfer Characteristics
150℃
0.4
1
Variation vs. Source Current
150℃
2
0.6
2
V
V
DS
V
V
Q
and Temperature
GS
SD
DS
= 160V
G
25℃
V
, Source-Drain Voltage [V]
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
= 100V
DS
0.8
-55℃
3
= 40V
4
1.0
4
6
1.2
5
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
1.4
※ Note : I
6
DS
GS
= 30V
= 0V
8
D
1.6
= 3.8 A
7
1.8
Rev. A, May 2001
10
8