FQI5N60C Fairchild Semiconductor, FQI5N60C Datasheet
FQI5N60C
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FQI5N60C Summary of contents
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... ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● FQB5N60C / FQI5N60C Units 600 V 4 210 mJ 4 4.5 V/ns 3.13 W ...
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... 4.5A, di/dt 200A Starting DSS, 4. Pulse Test : Pulse width 300 s, Duty cycle 5. Essentially independent of operating temperature ©2003 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 600 V, V ...
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... Drain Current and Gate Voltage 1000 800 C iss 600 C oss 400 C 200 rss Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2003 Fairchild Semiconductor Corporation ※ Notes : 1. 250 μ s Pulse Test = 25 ℃ 10V ...
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... V , Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2003 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0.5 = 250 μ 0.0 -100 100 150 200 o C] Figure 8 ...
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... Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2003 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT ...
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... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2003 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type ...
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... Mechanical Dimensions ©2003 Fairchild Semiconductor Corporation PAK Dimensions in Millimeters Rev. A, October 2003 ...
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... Mechanical Dimensions ©2003 Fairchild Semiconductor Corporation PAK Dimensions in Millimeters Rev. A, October 2003 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ ...